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Chlorine auto-doping by chloride vapor phase epitaxial growth of InP

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Abstract

Chlorine auto-doping phenomenon was found for the first time in InP epitaxial growth by using a PCl3/InP/H2 system. Chlorine atoms act as a donor in the epitaxial layer and the carrier concentration is dependent on the facet of InP substrate. The carrier concentration of the InP layer on ( 111)B facet was over 103 times higher than that on (111)A substrate.

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Authors and Affiliations

  1. Optoelectronics R&D, Sumitomo Electric Industries, Ltd., 1-1-3, Shimaya 1-chome, Konohana-ku, Osaka, Japan

    T. Iwasaki, Y. Iguchi & N. Yamabayashi

  2. Optoelectronic Industry and Technology Development Association, 7-5-8, Toyo, Koto-ku, Tokyo, Japan

    S. Yoneyama

Authors
  1. T. Iwasaki
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  2. Y. Iguchi
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  3. N. Yamabayashi
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  4. S. Yoneyama
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Iwasaki, T., Iguchi, Y., Yamabayashi, N. et al. Chlorine auto-doping by chloride vapor phase epitaxial growth of InP. J. Electron. Mater. 25, 463–466 (1996). https://doi.org/10.1007/BF02666621

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  • DOI: https://doi.org/10.1007/BF02666621

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