Abstract
Crystal quality of 2′ Φ S doped InP substrates grown by the conventional liquid encapsulated Czochralski method was studied by the photoluminescence mapping technique and double crystal x-ray diffraction method. Dark currents of InGaAs/InP PIN-photodiodes (PIN-PDs) fabricated on them showed the existence of an anomaly at the center of the substrate. Photoluminescence intensity abruptly decreased at the center of the substrate. An abnormal curvature of the lattice plane was found at the center of the substrate by the double crystal x-ray diffraction measurement. We discuss the correlation between crystal quality of the substrate and dark currents of PIN-PDs.
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Iguchi, Y., Iwasaki, T. & Yamabayashi, N. Crystal anomaly at the center of S doped InP wafers grown by the LEC method. J. Electron. Mater. 25, 327–330 (1996). https://doi.org/10.1007/BF02666596
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DOI: https://doi.org/10.1007/BF02666596