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Properties of lnAsxP1-x layer formed by P-As exchange reaction on (001)lnP surface exposed to As4 beam

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Abstract

The P-As exchange reaction on InP surface exposed to As4 beam was studied using photoluminescence (PL) and x-ray diffraction measurements as well as ultra-high vacuum scanning tunneling microscopy observation. It was found that as high as 90–95% of P can be exchanged by As and that the average depth of exchange reaction increases with the increase of As exposure time, being as deep as 5.5 ML for a long exposure. The splitting of PL peak takes place when the reaction depth exceeds 2 ML and the number of the split subpeaks increases with the increase of As exposure time. The PL peak splitting originates from the fluctuation of well thickness, caused by formation of InAs islands for strain relief during the exchange reaction.

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  1. B. X. Yang

    Present address: Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai, People’s Rep. of China

Authors and Affiliations

  1. Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, N13, W8, 060, Sapporo, Japan

    B. X. Yang, L. He & H. Hasegawa

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  1. B. X. Yang
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  2. L. He
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  3. H. Hasegawa
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Yang, B.X., He, L. & Hasegawa, H. Properties of lnAsxP1-x layer formed by P-As exchange reaction on (001)lnP surface exposed to As4 beam. J. Electron. Mater. 25, 379–384 (1996). https://doi.org/10.1007/BF02666606

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  • DOI: https://doi.org/10.1007/BF02666606

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