Growth and characterization of lead-tin-ytterbium-telluride for diode lasers D. L. Partin OriginalPaper Pages: 917 - 929
Precipitation of tellurium in (Hg, Cd)Te alloys H. F. SchaakeJ. H. Tregilgas OriginalPaper Pages: 931 - 945
Schottky barriers fabricated on glow discharge A-Si:H films deposited under bias Boguslaw S. BoratynskiStanley V. Jaskolski OriginalPaper Pages: 947 - 958
Growth of GaAs1−x Sbx by organometallic vapor phase epitaxy S. M. BedairM. L. TimmonsJ. R. Hauser OriginalPaper Pages: 959 - 972
Isolation of silicon film grown on porous silicon layer Hiroshi TakaiTadatsugu Itoh OriginalPaper Pages: 973 - 982
The effect of Tl2Te3 on the properties of the solid solution (Sb2Te3)0.75.(Bi2Te3)0.25 A. SherM. ShilohL. Ben-Dor OriginalPaper Pages: 983 - 988
Unique optical and electronic properties of thin film, non-polymeric compounds for device applications M. L. KaplanS. R. ForrestA. J. Lovinger OriginalPaper Pages: 989 - 1001
Deep level effects in silicon and germanium after plasma hydrogenation S. J. PeartonJ. M. KahnE. E. Haller OriginalPaper Pages: 1003 - 1014
Electroepitaxial (peltier-induced) liquid phase epitaxy, compositional stabilization and x-ray analysis of thick (120 µm) In1-xGaxP EPILAYERS ON (100) GaAs J. J. DanieleA. Lewis OriginalPaper Pages: 1015 - 1031
BF3-doped amorphous silicon thin films A. H. MahanRalph C. KernsaGenevieve Devaud OriginalPaper Pages: 1033 - 1049
Effect of substrate annealing and V: III flux ratio on the molecular beam epitaxial growth of AlGaAs-GaAs single quantum wells P. A. MakiS. C. PalmateerA. R. Calawa OriginalPaper Pages: 1051 - 1063
