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Schottky barriers fabricated on glow discharge A-Si:H films deposited under bias

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Abstract

Hydrogenated amorphous silicon films were deposited in a three electrode dc glow discharge system under the substrate bias. The composition of the films, using infrared spectroscopy, has been investigated. The photovoltaic parameters of the fabricated Au and Pt Schottky barrier structures have been measured. The purpose of this study was to determine if polarization of the substrates influence the properties of the deposited a-Si:H films.

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Authors and Affiliations

  1. Department of Electrical Engineering and Computer Science, Marquette University, 53233, Milwaukee, Wisconsin

    Boguslaw S. Boratynski & Stanley V. Jaskolski

Authors
  1. Boguslaw S. Boratynski
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  2. Stanley V. Jaskolski
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At present with the EECS Department, University of Santa Clara, Santa Clara, California 95053.

At present with the Eaton Corporation, Milwaukee, Wisconsin 53216.

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Boratynski, B.S., Jaskolski, S.V. Schottky barriers fabricated on glow discharge A-Si:H films deposited under bias. J. Electron. Mater. 12, 947–958 (1983). https://doi.org/10.1007/BF02654966

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  • DOI: https://doi.org/10.1007/BF02654966

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