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Effect of substrate annealing and V: III flux ratio on the molecular beam epitaxial growth of AlGaAs-GaAs single quantum wells

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Abstract

Photoluminescence spectra are presented on single quantum well (SQW) structures on thick (1.0 µm) A10.20Ga0.80As buffers grown by molecular beam epitaxy (MBE). Through substrate preparation and careful control of growth conditions, full width half maximum (FWHM) luminescence line-widths of 0.7 meV have been achieved for the n= l confined electron-heavy hole transition. This is the narrowest luminescent linewidth ever reported for any epitaxially grown material. Annealing of substrates with the subsequent removal of the converted surface prior to MBE growth is shown to improve SQW luminescence. Luminescence quality is shown to vary strongly with V: 111 flux ratio during well growth. Improved SQW luminescence is observed for SQW grown using lower V: 111 flux ratios. Growth of a GaAs SQW at 680°Cusing a V:III flux ratio one-half of that required for thick GaAs epilayers while maintaining the same surface reconstruction is demonstrated. The techniques reported are important for the growth of heterojunction interfaces and devices in AlGaAs-GaAs.

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Authors and Affiliations

  1. School of Electrical Engineering, Cornell University, 14853, Ithaca, NY

    P. A. Maki, S. C. Palmateer, G. W. Wicks & L. F. Eastman

  2. Lincoln Laboratory, Massachusetts Institute of Technology, 02173, Lexington, MA

    A. R. Calawa

Authors
  1. P. A. Maki
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  2. S. C. Palmateer
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  3. G. W. Wicks
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  4. L. F. Eastman
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  5. A. R. Calawa
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Maki, P.A., Palmateer, S.C., Wicks, G.W. et al. Effect of substrate annealing and V: III flux ratio on the molecular beam epitaxial growth of AlGaAs-GaAs single quantum wells. J. Electron. Mater. 12, 1051–1063 (1983). https://doi.org/10.1007/BF02654974

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  • DOI: https://doi.org/10.1007/BF02654974

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