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Growth of GaAs1−x Sbx by organometallic vapor phase epitaxy

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Abstract

Conditions for growth of GaAsQ1−x Sb1−x layers with x as high as 0.7 on GaAs substrates are described for temperatures between 580 and 650°C. Effects of substrate orientation on growth characteristics are noted, and comparisons of growth on (511)- and (100)-GaAs faces are made. The experimental results indicate growth is being controlled by surface reaction kinetics. A simple model based on kinetic control is presented and at least qualitatively explains the results.

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References

  1. M. L. Timmons and S. M. Bedair, Proceedings of the 15th IEEE Photovoltaic Specialists Conference, Orlando, 1289 (1981).

  2. R. E. Nahory, M. A. Pollack, E. D. Beebe, and J. C. DeWinter, Appl. Phys. Lett.27, 356 (1975).

    Article  CAS  Google Scholar 

  3. R. E. Nahory, M. A. Pollack, and J. K. Abrokwah, J. Appl. Phys.48, 3988 (1977).

    Article  CAS  Google Scholar 

  4. H. M. Manasevit and W. I. Simpson, J. Electrochem. Soc.116, 1725 (1969).

    Article  CAS  Google Scholar 

  5. K. L. Hess, R. Chin, and P. D. Dapkus, Eletron. Mat. Conf. (1982).

  6. L. M. Fraas, B. D. Shu, J. A. Cape, R. A. Ransom, and D. E. Sawyer, Proceedings of the 16th IEEE Photovoltaic Specialists Conference, San Diego (1982).

  7. C. B. Cooper, III, R. R. Sexena, and M. J. Ludowise, J. Electron. Mater.11, 1001 (1982).

    Google Scholar 

  8. G. G. Olsen, T. J. Zamerowski, and F. Z. Hawrylo, J. Cryst. Growth59, 654 (1982).

    Article  CAS  Google Scholar 

  9. D. W. Shaw, J. Electrochem. Soc.115, 405 (1968).

    Article  CAS  Google Scholar 

  10. M. F. Gratton, R. G. Goodchild, L. Y. Jmavel, and J. C. Woolley, J. Electron. Mater.8, 25 (1979).

    CAS  Google Scholar 

  11. M. Yamo, Y. Suzuki, T. Ishii, Y. Matsushima, and M. Kimata, Jap. J. Appl. Phys.17, 2091 (1978).

    Article  Google Scholar 

  12. C. B. Cooper, III, M. J. Ludowise, V. Achi, and R. L. Moon, J. Electron. Mater.9, 299 (1980).

    Google Scholar 

  13. Takashi Fukui and Yoshiji Horikoshi, J. Appl. Phys.19, L53 (1980).

    Article  CAS  Google Scholar 

  14. R. E. Nahory, M. A. Pollack, J. C. DeWinter, and K. M. Williams, J. Appl. Phys.48, 1607, (1977).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Electrical Engineering, North Carolina State University, 27650, Raleigh, NC

    S. M. Bedair, P. K. Chiang, L. Simpson & J. R. Hauser

  2. Research Triangle Institute, P. O. Box 12194, 27709, Research Triangle Park, NC

    M. L. Timmons

Authors
  1. S. M. Bedair
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  2. M. L. Timmons
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  3. P. K. Chiang
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  4. L. Simpson
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  5. J. R. Hauser
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Bedair, S.M., Timmons, M.L., Chiang, P.K. et al. Growth of GaAs1−x Sbx by organometallic vapor phase epitaxy. J. Electron. Mater. 12, 959–972 (1983). https://doi.org/10.1007/BF02654967

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  • DOI: https://doi.org/10.1007/BF02654967

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