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Growth and characterization of lead-tin-ytterbium-telluride for diode lasers

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Abstract

PbSnYbTe is a new and potentially useful material for fabricating double hetero junction PbSnTe diode lasers by molecular b<sam epitaxy. These lasers should have improved carrier and photon confinement, resulting in improved external quantum efficiency and higher device operating temperature. It is found from room temperature optical transmission studies that the band gap of Pb1−x Ybx Te increases approximately as dEg/dx =; 3.3 eV for x < 0.04, and that the index of refraction decreases with increasing x. Doping studies of (Pb1−y Sny )0.97 Yb0.03Te indicate that> it can be doped heavily p-type at low temperatures for y ∼ 0.10. The lattice constant of (Pb0.85 Sn0.15)1−x Ybx Te is independent of x up to x ∼ 0.10. these characteristics make (Pb1−y Sny )1−x Ybx Te well-suited for the fabrication of lattice-matched double heterojunction lasers with y∼ 0.10.

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  1. Physics Department, General Motors Research Laboratories, 48090-9055, Warren, Michigan

    D. L. Partin

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Partin, D.L. Growth and characterization of lead-tin-ytterbium-telluride for diode lasers. J. Electron. Mater. 12, 917–929 (1983). https://doi.org/10.1007/BF02654964

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