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Electroepitaxial (peltier-induced) liquid phase epitaxy, compositional stabilization and x-ray analysis of thick (120 µm) In1-xGaxP EPILAYERS ON (100) GaAs

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Abstract

For the first time, thick (up to 120 um) epilayers of In1-xGaxp (0.30 <x<0.57) were grown on (100) GaAs using Electroepitaxial (Peltier-Induced) Liquid Phase Epitaxy. The epilayers were characterized with photoluminescence microanalysis and double-crystal x-ray topography. Over the entire compositional range studied, (0.30 <x<0.57) the epilayers showed stable and uniform composition with x varying by less than 0.02 over thicknesses exceeding 100 um. Double-crystal x-ray diffraction was carried out using the parallel setting with a GaAs reference crystal and the (422) reflection. Rocking curves were taken over the compositional range of (0.40 < x < 0.52). As expected, narrow peaks ( 13 sec, FWHM) were obtained for compositions corresponding to a good lattice match (x=0.51) and broad peaks (412 sec, FWHM) for a poor match (x=.4O). All epilayers studied by x-ray (0.40 < x < 0.52) gave good rocking curves and are single crystals.

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References

  1. R.J. Archer, J. Electron. Mater.1, 128 (1972).

    CAS  Google Scholar 

  2. R.D. Burnham, N. Holonyak, Jr., D. L. Keune and D. R. Scifres, Appl. Phys. Lett.13, 160 (1971).

    Article  Google Scholar 

  3. B.W. Hakki, J. Electrochem. Soc.118, 1469 (1971).

    Article  CAS  Google Scholar 

  4. G.B. Stringfellow, P.F. Lindquist and R.A. Burmeister, J. Electron. Mater.1, 437 (1972).

    CAS  Google Scholar 

  5. W.R. Hitchens, N. Holonyak, Jr., M.H. Lee and J.C. Campbell, J. Cryst. Growth27, 154 (1974).

    CAS  Google Scholar 

  6. H. Asai and K. Oe, J. Appl. Phys.53, 6849 (1982)

    Article  CAS  Google Scholar 

  7. B.I. Miller and W.D. Johnston, Jr., Appl. Phys. Lett.25, 216 (1974).

    Article  CAS  Google Scholar 

  8. G. Schul and P. Mischel, Appl. Phys. Lett.26, 394 (1975).

    Article  CAS  Google Scholar 

  9. J.J. Daniele, Appl. Phys. Lett.27, 373 (1975).

    Article  CAS  Google Scholar 

  10. J.J. Daniele and A. J. Hebling, J.Appl. Phys.52, 4325 (1981).

    Article  CAS  Google Scholar 

  11. J.J. Daniele, D.A.Cammack and P.M. Asbeck, J. Appl. Phys.48, 914 (1977).

    Article  Google Scholar 

  12. L. Jastrzebski et al., J. Appl. Phys.49 (12), 5909 (1978)

    Article  CAS  Google Scholar 

  13. E.G. Dierschke, L.E. Stone and R.W. Haisty, Appl. Phys. Lett.19, 98 (1971).

    Article  CAS  Google Scholar 

  14. J.J. Daniele, J. Electrochem. Soc.124, 1143 (1977).

    Article  CAS  Google Scholar 

  15. G.B. Stringfellow, J. Electrochem. Soc.117, 1301 (1970).

    Article  CAS  Google Scholar 

  16. T. Bryskiewicz, J. Lagowski and H.C. Gatos, J.Appl.Phys.51 (2), 988 (1980).

    Article  CAS  Google Scholar 

  17. K. Kohra, H. Hashizume and J. Yoshimura, Jpn. J.Appl.Phys.9, 1029 (1970).

    Article  CAS  Google Scholar 

  18. J.J. Hornstra and W.J. Bartels, J.Cryst. Growth44, 513 (1978).

    Article  CAS  Google Scholar 

  19. W.J. Bartels and W. Nijman, J. Cryst. Growth44, 518 (1978).

    Article  CAS  Google Scholar 

  20. W.J.Bartels and H.Veenvliet, Philips Report No. M.S. 10,665 (1978).

    Google Scholar 

Download references

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Authors and Affiliations

  1. Philips Laboratories, A Division of North American Philips Corporation, 10510, Briarcliff Manor, New York

    J. J. Daniele & A. Lewis

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  1. J. J. Daniele
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  2. A. Lewis
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Present address: Xerox Corporation (W128), Joseph C. Wilson Center for Technology, Rochester, NY 14644

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Daniele, J.J., Lewis, A. Electroepitaxial (peltier-induced) liquid phase epitaxy, compositional stabilization and x-ray analysis of thick (120 µm) In1-xGaxP EPILAYERS ON (100) GaAs. J. Electron. Mater. 12, 1015–1031 (1983). https://doi.org/10.1007/BF02654972

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  • DOI: https://doi.org/10.1007/BF02654972

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