1. Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons

   • R. K. Yafarov

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 05 February 2018 Pages: 137 - 142

2. Conductivity of Ga₂O₃–GaAs Heterojunctions

   • V. M. Kalygina
   • I. L. Remizova
   • O. P. Tolbanov

   Electronic Properties of Semiconductors 05 February 2018 Pages: 143 - 149

3. Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime

   • M. A. Ormont
   • I. P. Zvyagin

   Electronic Properties of Semiconductors 05 February 2018 Pages: 150 - 155

4. Dielectric Properties and Conductivity of Ag-Doped TlGaS₂ Single Crystals

   • S. N. Mustafaeva
   • S. M. Asadov
   • E. M. Kerimova

   Electronic Properties of Semiconductors 05 February 2018 Pages: 156 - 159

5. Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures

   • V. Kažukauskas
   • R. Garbačauskas
   • S. Savicki

   Electronic Properties of Semiconductors 05 February 2018 Pages: 160 - 164

6. Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers

   • M. M. Sobolev
   • F. Yu. Soldatenkov

   Electronic Properties of Semiconductors 05 February 2018 Pages: 165 - 171

7. Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range

   • Yu. V. Ulashkevich
   • V. V. Kaminskiy
   • N. V. Sharenkova

   Spectroscopy, Interaction with Radiation 05 February 2018 Pages: 172 - 176

8. Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films

   • Kh. A. Abdullin
   • L. V. Gritsenko
   • E. I. Terukov

   Spectroscopy, Interaction with Radiation 05 February 2018 Pages: 177 - 183

9. Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition

   • Ya. V. Lubyanskiy
   • A. D. Bondarev
   • I. S. Tarasov

   Surfaces, Interfaces, and Thin Films 05 February 2018 Pages: 184 - 188

10. Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping

    • D. A. Safonov
    • A. N. Vinichenko
    • I. S. Vasil’evskii

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 February 2018 Pages: 189 - 194

11. Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells

    • N. V. Pavlov
    • G. G. Zegrya
    • V. E. Bugrov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 February 2018 Pages: 195 - 208

12. Optical Properties of Tellurium-Based Chalcogenide Alloys in the Far Infrared Region (λ > 30 μm)

    • V. A. Ryzhov
    • B. T. Melekh

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 February 2018 Pages: 209 - 214

13. Microstructure and Raman Scattering of Cu₂ZnSnSe₄ Thin Films Deposited onto Flexible Metal Substrates

    • A. V. Stanchik
    • V. F. Gremenok
    • A. M. Saad

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 05 February 2018 Pages: 215 - 220

14. Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al _x Ga_{1 – x}N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy

    • V. V. Ratnikov
    • M. P. Sheglov
    • K. S. Zhuravlev

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 05 February 2018 Pages: 221 - 225

15. On the Extended Holstein–Hubbard Model for Epitaxial Graphene on Metal

    • S. Yu. Davydov

    Carbon Systems 05 February 2018 Pages: 226 - 230

16. Optimization of the Parameters of PbSB-based Polycrystalline Photoresistors

    • B. N. Miroshnikov
    • I. N. Miroshnikova
    • A. I. Popov

    Carbon Systems 05 February 2018 Pages: 231 - 235

17. Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC

    • M. N. Solovan
    • G. O. Andrushchak
    • P. D. Maryanchuk

    Physics of Semiconductor Devices 05 February 2018 Pages: 236 - 241

18. Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

    • S. E. Tyaginov
    • A. A. Makarov
    • T. Grasser

    Physics of Semiconductor Devices 05 February 2018 Pages: 242 - 247

19. Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers

    • F. I. Zubov
    • M. V. Maximov
    • A. E. Zhukov

    Physics of Semiconductor Devices 05 February 2018 Pages: 248 - 253

20. Electrical Activity of Extended Defects in Multicrystalline Silicon

    • S. M. Pescherova
    • E. B. Yakimov
    • R. V. Presnyakov

    Fabrication, Treatment, and Testing of Materials and Structures 05 February 2018 Pages: 254 - 259

21. Luminescence Properties of Cd _x Zn_{1 – x}O Thin Films

    • A. A. Lotin
    • O. A. Novodvorsky
    • V. A. Mikhalevsky

    Fabrication, Treatment, and Testing of Materials and Structures 05 February 2018 Pages: 260 - 263

22. Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics

    • A. F. Shimanskii
    • T. O. Pavlyuk
    • A. N. Gorodishcheva

    Fabrication, Treatment, and Testing of Materials and Structures 05 February 2018 Pages: 264 - 267

23. Ion-Beam Synthesis of the Crystalline Ge Phase in SiO _x N _y Films upon Annealing under High Pressure

    • I. E. Tyschenko
    • G. K. Krivyakin
    • V. A. Volodin

    Fabrication, Treatment, and Testing of Materials and Structures 05 February 2018 Pages: 268 - 272