Abstract
The effect of hybridization of electron states on the high-frequency conductivity of disordered semiconductors is studied. It is shown that the dependence of the pre-exponential factor of the resonance integral on the intercenter separation in a pair determines the abruptness of the change in conductivity mechanisms near the transition of the frequency dependence of the real part of the conductivity σ1(ω) from sublinear to quadratic. The abruptness of the change of the conductivity regimes is associated with a rapid decrease in hopping distance with increasing frequency near the transition, which leads to a substantial relative decrease in the contribution from the phononless conductivity component in the variable-range hopping regime with increasing frequency and transition to the fixed-range hopping conductivity regime.
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Original Russian Text © M.A. Ormont, I.P. Zvyagin, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 2, pp. 161–166.
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Ormont, M.A., Zvyagin, I.P. Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime. Semiconductors 52, 150–155 (2018). https://doi.org/10.1134/S1063782618020100
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DOI: https://doi.org/10.1134/S1063782618020100