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Microstructure and Raman Scattering of Cu2ZnSnSe4 Thin Films Deposited onto Flexible Metal Substrates

  • Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
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Abstract

Cu2ZnSnSe4 thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu2ZnSnSe4 films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy.

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Correspondence to A. V. Stanchik.

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Original Russian Text © A.V. Stanchik, V.F. Gremenok, S.A. Bashkirov, M.S. Tivanov, R.L. Juškénas, G.F. Novikov, R. Giraitis, A.M. Saad, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 2, pp. 227–232.

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Stanchik, A.V., Gremenok, V.F., Bashkirov, S.A. et al. Microstructure and Raman Scattering of Cu2ZnSnSe4 Thin Films Deposited onto Flexible Metal Substrates. Semiconductors 52, 215–220 (2018). https://doi.org/10.1134/S1063782618020197

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  • DOI: https://doi.org/10.1134/S1063782618020197

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