1. Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition

   • Yu. B. Bolkhovityanov
   • A. K. Gutakovskii
   • L. V. Sokolov

   Review 05 February 2011 Pages: 1 - 20

2. The linear stage of evolution of electron-hole avalanches in semiconductors

   • A. S. Kyuregyan

   Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 21 - 28

3. Optical spectroscopy of free excitons in a CuInS₂ chalcopyrite semiconductor compound

   • A. V. Mudryi
   • A. V. Ivanyukovich
   • A. Saad

   Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 29 - 33

4. Electrical properties of proton-irradiated CdSnAs₂

   • V. N. Brudnyi
   • T. V. Vedernikova

   Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 34 - 37

5. Dependence of the band bending at the AgBr-AgI microcontact interface on the shape and size of the heterogeneous system

   • A. V. Khaneft
   • A. S. Poplavnoi
   • L. V. Sotnikova

   Semiconductor Structures, Interfaces, and Surfaces 05 February 2011 Pages: 38 - 42

6. Sodium-peak splitting in dynamic current-voltage characteristics of convective ion currents in metal-oxide-semiconductor structures

   • S. G. Dmitriev
   • Yu. V. Markin

   Semiconductor Structures, Interfaces, and Surfaces 05 February 2011 Pages: 43 - 51

7. Deep levels and electron transport in AlGaN/GaN heterostructures

   • I. V. Antonova
   • V. I. Polyakov
   • K. S. Zhuravlev

   Semiconductor Structures, Interfaces, and Surfaces 05 February 2011 Pages: 52 - 58

8. Metal-to-semiconductor emission of hot electrons excited on catalytic reaction

   • V. F. Kharlamov
   • A. V. Kostin
   • F. V. Kharlamov

   Semiconductor Structures, Interfaces, and Surfaces 05 February 2011 Pages: 59 - 66

9. Radiative recombination channels in Si/Si_{1 − x} Ge _x nanostructures

   • Yu. A. Berashevich
   • A. S. Panfilenok
   • V. E. Borisenko

   Low-Dimensional Systems 05 February 2011 Pages: 67 - 73

10. In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix

    • A. N. Semenov
    • O. G. Lyublinskaya
    • S. V. Ivanov

    Low-Dimensional Systems 05 February 2011 Pages: 74 - 79

11. Limiting values of the quality factor of thermoelectric composites

    • A. A. Snarskii
    • M. I. Zhenirovskii
    • I. V. Bezsudnov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 February 2011 Pages: 80 - 85

12. High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p ⁺-n junctions

    • E. V. Kalinina
    • N. B. Strokan
    • R. R. Yafaev

    Physics of Semiconductor Devices 05 February 2011 Pages: 86 - 91

13. Reconstruction of the potential profile in an insulating layer using current-voltage characteristics of tunneling MIS diodes

    • E. I. Goldman
    • A. G. Zhdan
    • M. V. Chernyaev

    Physics of Semiconductor Devices 05 February 2011 Pages: 92 - 98

14. The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

    • L. D. Moldavskaya
    • N. V. Vostokov
    • V. I. Shashkin

    Physics of Semiconductor Devices 05 February 2011 Pages: 99 - 103

15. Contribution of Auger recombination to saturation of the light-current characteristics in high-power laser diodes (λ = 1.0–1.9 m m)

    • A. V. Lyutetskiĭ
    • K. S. Borshchev
    • I. S. Tarasov

    Physics of Semiconductor Devices 05 February 2011 Pages: 104 - 111

16. Injection-based photodetectors

    • I. M. Vikulin
    • Sh. D. Kurmashev
    • V. I. Stafeev

    Physics of Semiconductor Devices 05 February 2011 Pages: 112 - 127