Abstract
Based on the measurements of current-voltage and capacitance-voltage characteristics and deep-level transient spectroscopy, comparison of the concentration of deep-level centers and conductivity of the channel of the AlGaN/GaN heterostructures grown by molecular beam epitaxy with the use of ammonia as the nitrogen source is carried out. Two types of defects with deep levels are revealed. One type is presumably associated with point defects localized near dislocations, and the other type is associated with the dislocations themselves. An increase in the concentration of the centers with deep levels correlates with an increase in the channel resistivity. The density of the deep-level centers can attain values of ∼1013 cm−2 and lead to compensation of the electron channel at the heterointerface.
Similar content being viewed by others
References
H. X. Jiang and J. Y. Lin, Opto-Electron. Rev. 10, 271 (2002).
O. Ambacher, B. Foutz, J. Smart, et al., J. Appl. Phys. 87, 334 (2000).
A. Asgari, M. Kalafi, and L. Faraone, J. Appl. Phys. 95, 1185 (2004).
V. I. Polyakov, P. I. Petrov, O. N. Ermakova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 23, 125 (1989) [Sov. Phys. Semicond. 23, 76 (1989)].
V. D. Lang, J. Appl. Phys. 45, 3023 (1974).
D. Poss, Appl. Phys. Lett. 37, 413 (1980).
W. Schroter and H. Cerva, Solid State Phenom. 85–86, 64 (2002).
Z.-Q. Fang, D. C. Look, X.-L. Wang, et al., Appl. Phys. Lett. 82, 1562 (2003).
L. Lee, F. C. Chang, H. M. Chung, et al., Chin. J. Phys. (Taipei) 40, 424 (2002).
K. Hofmann and M. Schulz, J. Electrochem. Soc. 132, 2201 (1985).
J. Osaka, Y. Ohno, S. Kishimoto, et al., Appl. Phys. Lett. 87, 222 112 (2005).
A. Hierro, A. R. Arehart, B. Heying, et al., Phys. Status Solidi B 228, 309 (2001).
L. Lymperakis, J. Neugebauer, M. Albrecht, et al., Phys. Rev. Lett. 93, 196401 (2004).
N. A. Cherkashin, N. A. Bert, Yu. G. Musikhin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 903 (2000) [Semiconductors 34, 867 (2000)].
V. G. Mansurov, A. Yu. Nikitin, Yu. G. Galitsyn, et al., J. Cryst. Growth 300, 145 (2007).
Author information
Authors and Affiliations
Additional information
Original Russian Text © I.V. Antonova, V.I. Polyakov, A.I. Rukavishnikov, V.G. Mansurov, K.S. Zhuravlev, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 1, pp. 53–59.
Rights and permissions
About this article
Cite this article
Antonova, I.V., Polyakov, V.I., Rukavishnikov, A.I. et al. Deep levels and electron transport in AlGaN/GaN heterostructures. Semiconductors 42, 52–58 (2008). https://doi.org/10.1134/S1063782608010077
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782608010077