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High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p +-n junctions

  • Physics of Semiconductor Devices
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Abstract

Results obtained in a study of spectrometric characteristics of arrays of four detectors based on 4H-SiC ion-implantation-doped p +-n junctions in the temperature range 25–140 °C are reported for the first time. The junctions were fabricated by ion implantation of aluminum into epitaxial 4H-SiC layers of thickness ≤45 μm, grown by chemical vapor deposition with uncompensated donor concentration N d − N a = (4–6) × 1014 cm−3. The structural features of the ion-implantation-doped p +-layers were studied by secondary-ion mass spectrometry, transmission electron microscopy, and Rutherford backscattering spectroscopy in the channeling mode. Parameters of the diode arrays were determined by testing in air with natural-decay alpha particles with an energy of 3.76 MeV. The previously obtained data for similar single detectors were experimentally confirmed: the basic characteristics of the detector arrays, the charge collection efficiency and energy resolution, are improved as the working temperature increases.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    E. V. Kalinina, N. B. Strokan, A. M. Ivanov, A. A. Sitnikova & A. V. Sadokhin

  2. Electron-Optronic, St. Petersburg, 194223, Russia

    A. Yu. Azarov, V. G. Kossov & R. R. Yafaev

Authors
  1. E. V. Kalinina
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  2. N. B. Strokan
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  3. A. M. Ivanov
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  4. A. A. Sitnikova
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  5. A. V. Sadokhin
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  6. A. Yu. Azarov
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  7. V. G. Kossov
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  8. R. R. Yafaev
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Correspondence to E. V. Kalinina.

Additional information

Original Russian Text © E.V. Kalinina, N.B. Strokan, A.M. Ivanov, A.A. Sitnikova, A.V. Sadokhin, A.Yu. Azarov, V.G. Kossov, R.R. Yafaev, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 1, pp. 87–93.

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Kalinina, E.V., Strokan, N.B., Ivanov, A.M. et al. High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p +-n junctions. Semiconductors 42, 86–91 (2008). https://doi.org/10.1134/S1063782608010120

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  • DOI: https://doi.org/10.1134/S1063782608010120

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