Abstract
The properties necessary for the chemoemission of hot electrons through the interface between a metal film and a semiconductor are established for a metal-semiconductor structure in which hot electrons are excited during a catalytic reaction at the interface between the metal film and the gas mixture. The possibility of generating electric energy using a method based on this effect is substantiated.
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Original Russian Text © V.F. Kharlamov, A.V. Kostin, M.V. Kubyshkina, F.V. Kharlamov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 1, pp. 60–67.
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Kharlamov, V.F., Kostin, A.V., Kubyshkina, M.V. et al. Metal-to-semiconductor emission of hot electrons excited on catalytic reaction. Semiconductors 42, 59–66 (2008). https://doi.org/10.1134/S1063782608010089
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DOI: https://doi.org/10.1134/S1063782608010089