Abstract
Using the solution of the 2D Schrödinger equation, systematic features of distribution of charge carriers in the Si/Si1 − x Ge x nanostructures and variations in the efficiency of radiative recombination when pyramidal 2D clusters are transformed into 3D dome clusters with increasing thickness of nanolayers are established. The effect of the composition of the layers on the efficiency of the elastic stress in the structure and, as a consequence, the variation in conduction bands and valence band of the Si1 − x Ge x nanostructures is taken into account. On realization of the suggested kinetics model, which describes recombination processes in crystalline structures, saturation of radiation intensity with increasing the pump intensity caused by an increase in the contribution of the Auger recombination is observed. A decrease in the contribution of the nonradiative Auger recombination is attained by decreasing the injection rate of carriers into the clusters, and more precisely, by an increase in the cluster concentration and an increase in the rate of radiative recombination.
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Original Russian Text © Yu.A. Berashevich, A.S. Panfilenok, V.E. Borisenko, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 1, pp. 68–74.
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Berashevich, Y.A., Panfilenok, A.S. & Borisenko, V.E. Radiative recombination channels in Si/Si1 − x Ge x nanostructures. Semiconductors 42, 67–73 (2008). https://doi.org/10.1134/S1063782608010090
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DOI: https://doi.org/10.1134/S1063782608010090