Crystal anomaly at the center of S doped InP wafers grown by the LEC method Y. IguchiT. IwasakiN. Yamabayashi OriginalPaper Pages: 327 - 330
Electrical properties of the hydrogen defect in InP and the microscopic structure of the 2316 cm−1 hydrogen related line F. X. ZachE. E. HallerD. F. Bliss OriginalPaper Pages: 331 - 335
Fine structures of residual strain distribution in Fe-Doped lnP-100) wafers grown by the LEC and VCZ methods Masayuki FukuzawaMasayoshi Yamada OriginalPaper Pages: 337 - 342
Study on microscopic defects in Fe-Doped InP single crystals K. KohiroR. HiranoO. Oda OriginalPaper Pages: 343 - 346
Reduction of dislocation densities in InP single crystals by the LEC method using thermal baffles R. HiranoM. Uchida OriginalPaper Pages: 347 - 351
Effect of annealing conditions on the uniformity of undoped Semi-Insulating InP K. KainoshoM. OhtaO. Oda OriginalPaper Pages: 353 - 356
Multicomponent zone melting growth of ternary InGaAs bulk crystal T. SuzukiK. NakajimaT. Katoh OriginalPaper Pages: 357 - 361
Mesoscopic nonuniformity of wafer-annealed semi-insulating InP G. HirtD. WolfG. MÜller OriginalPaper Pages: 363 - 367
Improved selective growth of InP around dry-etched mesas by metalorganic chemical vapor deposition at low growth temperature M. TakemiT. KimuraS. Takamiya OriginalPaper Pages: 369 - 374
InAIGaAs selective MOVPE growth with bandgap energy shift T. TakeuchiM. TsujiK. Taguchi OriginalPaper Pages: 375 - 378
Properties of lnAsxP1-x layer formed by P-As exchange reaction on (001)lnP surface exposed to As4 beam B. X. YangL. HeH. Hasegawa OriginalPaper Pages: 379 - 384
MOVPE growth of strained InGaAs/lnAIAs MQWs for a polarization-insensitive electroabsorption modulator S. KondoK. WakitaK. Nakashima OriginalPaper Pages: 385 - 388
Temporally resolved selective regrowth of InP around [110] and [-110] mesas S. LourdudossE. Rodríguez MessmerG. Landgren OriginalPaper Pages: 389 - 394
Structural and optical characterization of InP/GalnP islands grown by solid-source MBE A. KurtenbachC. UlrichF. Phillipp OriginalPaper Pages: 395 - 400
Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP Y. SakataT. NakamuraH. Hasumi OriginalPaper Pages: 401 - 406
High-Mobility Ga0.47ln0.53As/lnP heterostructure by atmospheric-pressure MOVPE using cyclopentadienyl indium M. UsudaK. SatoT. Udagawa OriginalPaper Pages: 407 - 409
Selective growth of InP by MOCVD around dry-etched mesas having various patterns for photonic integrated circuits K. GotoM. TakemiY. Mihashi OriginalPaper Pages: 411 - 414
AIGaAsSb Buffer/Barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability S. MiyaS. MuramatsuI. Shibasaki OriginalPaper Pages: 415 - 420
Selective area growth of InP by plasma assisted solid-source epitaxy I. AllerH. L. Hartnagel OriginalPaper Pages: 421 - 424
Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates Toshihiro MoritaAkihiko KikuchiKatsumi Kishino OriginalPaper Pages: 425 - 430
Self-organization phenomenon of strained InGaAs on InP (311) substrates grown by metalorganic vapor phase epitaxy Jiro TemmyoAtsuo KozenHideki Hasegawa OriginalPaper Pages: 431 - 437
Growth mode transition processes in a GaAs/lnP system studied by scanning tunneling microscopy Shunsuke OhkouchiNobuyuki IkomaMasao Tamura OriginalPaper Pages: 439 - 441
Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH) H. ProtzmannZ. SpikaJ. Lorberth OriginalPaper Pages: 443 - 448
Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCI4 Kyushik HongDimitris Pavlidis OriginalPaper Pages: 449 - 455
Highly controlled lnGaAs(P)/lnP MQW interfaces grown by MOVPE using TBA and TBP precursors T. NakamuraS. AeT. Uji OriginalPaper Pages: 457 - 461
Chlorine auto-doping by chloride vapor phase epitaxial growth of InP T. IwasakiY. IguchiS. Yoneyama OriginalPaper Pages: 463 - 466
Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy S. SethiP. K. Bhattacharya OriginalPaper Pages: 467 - 477
Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1- xAs/GaAs system J. PamulapatiP. K. BhattacharyaR. L. Tober OriginalPaper Pages: 479 - 483
LP-MOCVD grown (lnAs)m(GaAs)m short period superlattices on InP Dae Kon OhKyung Soo SuhSahn Nahm OriginalPaper Pages: 485 - 489
Interband magneto-absorption in narrow-gap HgTe/CdTe superlattice structures R. SizmannP. HelgesenS. Løvold OriginalPaper Pages: 497 - 500
Current-voltage characteristics and X- ray diffraction study of Pd/Si1- xGex schottky contacts L. HeZ. Q. ShiY. D. Zheng OriginalPaper Pages: 501 - 505
Hydrogen etching for semiconductor materials in plasma doping experiments Shu QinJames D. BernsteinChung Chan OriginalPaper Pages: 507 - 511
Investigation of strain-compensated lnGaAs(P)/lnGaAs(P)/lnP multiple quantum well structures grown by LP-MOVPE Haiyan AnShuren YangShiyong Liu OriginalPaper Pages: 513 - 517
Deposition of InGaAsP alloys on GaAs by low pressure metalorganic vapor phase epitaxy: Theory and experiments S. PellegrinoL. Vitali OriginalPaper Pages: 519 - 525
High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide Veena MisraXiaoli XuJimmie J. Wortman OriginalPaper Pages: 527 - 535
Surface passivation of lnP/ln0.53Ga0.47As heterojunction bipolar transistors for opto-electronic integration Dong-Su KimChih-Ping ChaoStephen R. Forrest OriginalPaper Pages: 537 - 540
Analysis of ion beam induced damage and amorphization of 6H-SiC by raman scattering A. Pérez-RodríguezY. PacaudJ. R. Morante OriginalPaper Pages: 541 - 547
Noise investigation of ultraviolet laser induced grain structure in polyimide films Z. KocsisZ. S. KincsesI. Mojzes OriginalPaper Pages: 549 - 551