Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals A. A. GladilinN. N. IlichevG. G. Novikov ELECTRONIC PROPERTIES OF SEMICONDUCTORS 23 April 2019 Pages: 1 - 8
Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium V. F. BannayaE. V. Nikitina ELECTRONIC PROPERTIES OF SEMICONDUCTORS 23 April 2019 Pages: 9 - 13
Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals R. K. Yafarov SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 14 - 21
Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping A. N. GruzintsevA. N. Redkin SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 22 - 27
Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures N. A. Torkhov SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 28 - 36
Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi1 –xSbx)2Te3 Topological Insulators A. V. GaleevaM. A. GomankoD. R. Khokhlov SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 37 - 41
Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements E. I. GoldmanN. F. KuharskayaG. V. Chucheva SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 23 April 2019 Pages: 42 - 45
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE M. P. MikhailovaE. V. IvanovYu. P. Yakovlev SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 23 April 2019 Pages: 46 - 50
The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films M. A. ElistratovaI. B. ZakharovaO. M. Sreseli AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 23 April 2019 Pages: 51 - 54
Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters S. M. PeshcherovaE. B. YakimovR. V. Presnyakov MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 55 - 59
Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining I. E. TyschenkoE. D. ZhanaevV. P. Popov MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 60 - 64
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology P. V. SeredinD. L. GoloshchapovM. Rinke MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 65 - 71
Investigation into the Memristor Effect in Nanocrystalline ZnO Films V. A. SmirnovR. V. TominovO. A. Ageev MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 72 - 77
A Chainlike Model of the Zigzag Edge Decoration of Graphene S. Yu. Davydov CARBON SYSTEMS 23 April 2019 Pages: 78 - 84
On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect E. I. GoldmanA. NabievG. V. Chucheva PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 85 - 88
Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis G. S. KhrypunovA. V. MeriutsM. G Khrypunov PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 89 - 95
Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell A. A. SvintsovE. B. YakimovYu. M. Kuznetsov PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 96 - 98
Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well N. I. BochkarevaA. M. IvanovY. G. Shreter PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 99 - 105
Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure N. D. KuzmichevM. A. Vasyutin PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 106 - 109
Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor N. A. KulikovV. D. Popov PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 110 - 113
Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence G. V. LiE. V. AstrovaA. I. Lihachev FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 114 - 126
Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method V. G. ShchukinR. G. SharafutdinovV. O. Konstantinov FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 127 - 131
Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe V. A. ShvetsI. A. AzarovS. V. Rykhlitsky FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 132 - 137