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Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals

  • SURFACES, INTERFACES, AND THIN FILMS
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Abstract

The regularities governing the surface modification of silicon crystals during microwave-plasma microprocessing in different chemically active gaseous media are investigated. This modification is shown to be caused by the formation of built-in surface potentials, which, depending on the semiconductor electrical-conductivity type, differently affect the field-emission properties and surface electron transport in devices based on them.

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REFERENCES

  1. V. L. Bonch-Bruevich, and S. G. Kalashnikov, Physics of Semiconductors (Nauka, Moscow, 1977) [in Russian].

    Google Scholar 

  2. K. Oura, V. G. Lifshits, A. A. Saranin, A. V. Zotov, and M. Katayama, Surface Science: An Introduction (Springer, New York, 2003; Nauka, Moscow, 2006).

  3. R. K. Yafarov, Nanotechnology Microwave Vacuum-Plasma Equipments (Fizmatlit, Moscow, 2009) [in Russian].

    Google Scholar 

  4. R. K. Yafarov and V. Ya. Shanygin, Semiconductors 51, 531 (2017).

    Article  ADS  Google Scholar 

  5. D. V. Budko and R. K. Yafarov, in Proceedings of the 6th All-Russia Conference of Young Scientists on Nanoelectronics, Nanophotonics and Nonlinear Physics, Saratov, Russia, 2011, p. 13.

  6. R. K. Yafarov and S. A. Klimova, Tech. Phys. 59, 411 (2014).

    Article  Google Scholar 

  7. Fei Zhao, Jian-hua Deng, Dan-dan Zhao, Ke-fan Chen, Guo-an Cheng, and Rui-ting Zheng, J. Nanosci. Nanotechnol. 10, 1 (2010).

    Article  Google Scholar 

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ACKNOWLEDGMENTS

This study was supported by the Russian Science Foundation, project no. 16-19-10033.

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Authors and Affiliations

  1. Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, 410019, Saratov, Russia

    R. K. Yafarov

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  1. R. K. Yafarov
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Correspondence to R. K. Yafarov.

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Translated by E. Bondareva

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Yafarov, R.K. Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals. Semiconductors 53, 14–21 (2019). https://doi.org/10.1134/S106378261901024X

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  • DOI: https://doi.org/10.1134/S106378261901024X

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