Abstract
A simple numerical method for processing the data of the high-frequency capacitance–voltage characteristics of metal–insulator–semiconductor structures is proposed. The approach is based on analyzing the experimental characteristics near the flat-band states, where the charge exchange of surface localized electron states is of little importance compared with changes in the near-boundary charged layer in the semiconductor. The developed technique makes it possible, first, to find the necessary parameters of the semiconductor and insulating layer and, second, to obtain the experimental field dependences of the energy-band bending in the semiconductor and the total concentration of the built-in charge, the charge of boundary states and minority charge carriers at the semiconductor–insulator interface in the range from the flat bands to deep depletion. The technique is well applicable to structures with an ultra-thin insulating layer. On n-Si-based metal–oxide–semiconductor samples with an oxide thickness of 39 Å, experimental approbation of the proposed approach is carried out. The accuracy of the obtained results is 2–3%.
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Notes
It should be noted that the transition layers can occupy more than 40% of the insulator volume in Si–SiO2–poly-Si structures with a super-thin oxide. Therefore, the values of \({{\varkappa }_{i}}\) and h should be in fact efficient and dependent on the insulator thickness and on the technology of its preparation.
As the plateau, we should understand a segment of the graph in the depletion region of the semiconductor, where the quantity psq varies with voltage as weakly as possible. At least, the condition q|dpsq/dVg| ≪ |dQsd/dVg|, where Qsd = (2CiT/qS) × \({{(q{{V}_{{sh}}}T)}^{{1/2}}}{{({{e}^{{ - {{{v}}_{s}}}}} + {{{v}}_{s}} - 1)}^{{1/2}}}{\text{sgn}}{{{v}}_{s}}\) is the charge per unit area of the semiconductor surface, associated with the overflow of free electrons with changing field voltage should be fulfilled.
In this region the total concentration of the built-in charge, the boundary-state charge, and the minority charge strongly vary.
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ACKNOWLEDGMENTS
The study was partially supported by the Russian Foundation for Basic Research, project no. 16-07-00666 and within the Programs of Fundamental Research of the Presidium of the Russian Academy of Sciences “Nanostructures: physics, chemistry, biology, fundamentals of technologies”.
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Translated by V. Bukhanov
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Goldman, E.I., Kuharskaya, N.F., Levashov, S.A. et al. Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements. Semiconductors 53, 42–45 (2019). https://doi.org/10.1134/S1063782619010081
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DOI: https://doi.org/10.1134/S1063782619010081