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Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor

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Abstract

The results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate P = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the n-type channel in the passive and active modes are presented. Two stages of surface-defect formation are observed. A qualitative model is proposed to explain the effect of the the drain transistor voltage on the defect formation process.

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ACKNOWLEDGMENTS

We thank Doctor of Sci. (Phys.-Math). Prof. A.P. Menushenkov and Doctor of Sci. (Eng.) Prof. V.S. Pershenkov for discussion of our work and their remarks.

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Authors and Affiliations

  1. National Research Nuclear University “Moscow Engineering Physics Institute”, 115409, Moscow, Russia

    N. A. Kulikov & V. D. Popov

Authors
  1. N. A. Kulikov
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  2. V. D. Popov
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Correspondence to V. D. Popov.

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Translated by N. Korovin

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Kulikov, N.A., Popov, V.D. Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor. Semiconductors 53, 110–113 (2019). https://doi.org/10.1134/S1063782619010123

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  • DOI: https://doi.org/10.1134/S1063782619010123

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