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Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology

  • MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS
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Abstract

Integrated heterostructures exhibiting a nanocolumnar morphology of the InxGa1 –xN film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of InxGa1 –xN nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the c-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the InxGa1 –xN layer. The growth of InxGa1 –xN nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is ~25% higher than the emission intensity for the film grown on the c-Si substrate.

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ACKNOWLEDGMENTS

The study was supported by the President of the Russian Federation, grant RF MD-188.2017.2.

The part of the study concerned with growth experiments was supported by the Ministry of Education and Science of the Russian Federation, government order no. 16.9789.2017/BCh.

The part of the study of the possibility of controlling the morphology and composition of bulk and porous substrates was supported by Ioffe Institute. The part of the study concerned with the diagnostics of integrated structures was supported by the Ministry of Education and Science of the Russian Federation, government order to institutes of higher education in the field of research activities for 2017–2019, project no. 11.4718.2017/8.9.

We are grateful to the Karlsruhe Nano Micro Facility (KNMF, www.kit.edu/knmf) of Forschungszentrum Karlsruhe for providing access to equipment at their laboratories.

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Authors and Affiliations

  1. Voronezh State University, 394006, Voronezh, Russia

    P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin & A. N. Lukin

  2. St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. M. Mizerov & E. V. Nikitina

  3. Ioffe Institute, 194021, St. Petersburg, Russia

    I. N. Arsentyev

  4. Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany

    H. Leiste & M. Rinke

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  1. P. V. Seredin
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  2. D. L. Goloshchapov
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  3. D. S. Zolotukhin
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  4. A. S. Lenshin
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  7. E. V. Nikitina
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  8. I. N. Arsentyev
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  9. H. Leiste
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  10. M. Rinke
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Correspondence to P. V. Seredin.

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Translated by E. Smorgonskaya

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Seredin, P.V., Goloshchapov, D.L., Zolotukhin, D.S. et al. Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology. Semiconductors 53, 65–71 (2019). https://doi.org/10.1134/S1063782619010172

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