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Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method

  • FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES
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Abstract

Doped silicon films are fabricated using diborane and phosphine as doping gases by gas-jet plasma-chemical deposition with the application of an electron beam. The influence of the dopant-gas concentration, the addition of a fluorine-containing gas, and the background pressure on the conductivity and crystalline structure of silicon layers is investigated. Boron-doped amorphous films (a-Si:H) with a conductivity up to 5.2 × 10–3 (Ω cm)–1 are fabricated; when doping with phosphorus, microcrystalline silicon films (mc-Si:H) with a crystallinity up to 70% and conductivity at a level of 1 (Ω cm)–1 are fabricated.

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ACKNOWLEDGMENTS

This study was supported by FASO, Russia (project no. 01201350443 “Fundamental Thermophysical Problems in the Growth of Crystals and Films”).

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Authors and Affiliations

  1. Kutateladze Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. G. Shchukin, R. G. Sharafutdinov & V. O. Konstantinov

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  1. V. G. Shchukin
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  2. R. G. Sharafutdinov
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  3. V. O. Konstantinov
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Correspondence to V. O. Konstantinov.

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Translated by N. Korovin

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Shchukin, V.G., Sharafutdinov, R.G. & Konstantinov, V.O. Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method. Semiconductors 53, 127–131 (2019). https://doi.org/10.1134/S1063782619010184

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  • DOI: https://doi.org/10.1134/S1063782619010184

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