Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons R. K. Yafarov Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 05 February 2018 Pages: 137 - 142
Conductivity of Ga2O3–GaAs Heterojunctions V. M. KalyginaI. L. RemizovaO. P. Tolbanov Electronic Properties of Semiconductors 05 February 2018 Pages: 143 - 149
Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime M. A. OrmontI. P. Zvyagin Electronic Properties of Semiconductors 05 February 2018 Pages: 150 - 155
Dielectric Properties and Conductivity of Ag-Doped TlGaS2 Single Crystals S. N. MustafaevaS. M. AsadovE. M. Kerimova Electronic Properties of Semiconductors 05 February 2018 Pages: 156 - 159
Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures V. KažukauskasR. GarbačauskasS. Savicki Electronic Properties of Semiconductors 05 February 2018 Pages: 160 - 164
Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers M. M. SobolevF. Yu. Soldatenkov Electronic Properties of Semiconductors 05 February 2018 Pages: 165 - 171
Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range Yu. V. UlashkevichV. V. KaminskiyN. V. Sharenkova Spectroscopy, Interaction with Radiation 05 February 2018 Pages: 172 - 176
Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films Kh. A. AbdullinL. V. GritsenkoE. I. Terukov Spectroscopy, Interaction with Radiation 05 February 2018 Pages: 177 - 183
Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition Ya. V. LubyanskiyA. D. BondarevI. S. Tarasov Surfaces, Interfaces, and Thin Films 05 February 2018 Pages: 184 - 188
Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping D. A. SafonovA. N. VinichenkoI. S. Vasil’evskii Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 February 2018 Pages: 189 - 194
Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells N. V. PavlovG. G. ZegryaV. E. Bugrov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 February 2018 Pages: 195 - 208
Optical Properties of Tellurium-Based Chalcogenide Alloys in the Far Infrared Region (λ > 30 μm) V. A. RyzhovB. T. Melekh Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 February 2018 Pages: 209 - 214
Microstructure and Raman Scattering of Cu2ZnSnSe4 Thin Films Deposited onto Flexible Metal Substrates A. V. StanchikV. F. GremenokA. M. Saad Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 05 February 2018 Pages: 215 - 220
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al x Ga1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy V. V. RatnikovM. P. SheglovK. S. Zhuravlev Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 05 February 2018 Pages: 221 - 225
On the Extended Holstein–Hubbard Model for Epitaxial Graphene on Metal S. Yu. Davydov Carbon Systems 05 February 2018 Pages: 226 - 230
Optimization of the Parameters of PbSB-based Polycrystalline Photoresistors B. N. MiroshnikovI. N. MiroshnikovaA. I. Popov Carbon Systems 05 February 2018 Pages: 231 - 235
Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC M. N. SolovanG. O. AndrushchakP. D. Maryanchuk Physics of Semiconductor Devices 05 February 2018 Pages: 236 - 241
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures S. E. TyaginovA. A. MakarovT. Grasser Physics of Semiconductor Devices 05 February 2018 Pages: 242 - 247
Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers F. I. ZubovM. V. MaximovA. E. Zhukov Physics of Semiconductor Devices 05 February 2018 Pages: 248 - 253
Electrical Activity of Extended Defects in Multicrystalline Silicon S. M. PescherovaE. B. YakimovR. V. Presnyakov Fabrication, Treatment, and Testing of Materials and Structures 05 February 2018 Pages: 254 - 259
Luminescence Properties of Cd x Zn1 – xO Thin Films A. A. LotinO. A. NovodvorskyV. A. Mikhalevsky Fabrication, Treatment, and Testing of Materials and Structures 05 February 2018 Pages: 260 - 263
Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics A. F. ShimanskiiT. O. PavlyukA. N. Gorodishcheva Fabrication, Treatment, and Testing of Materials and Structures 05 February 2018 Pages: 264 - 267
Ion-Beam Synthesis of the Crystalline Ge Phase in SiO x N y Films upon Annealing under High Pressure I. E. TyschenkoG. K. KrivyakinV. A. Volodin Fabrication, Treatment, and Testing of Materials and Structures 05 February 2018 Pages: 268 - 272