Formation of S2 “quasi-molecules” in sulfur-doped silicon V. B. ShumanL. M. PortselYu. A. Astrov OriginalPaper 16 April 2015 Pages: 421 - 422
On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter A. S. ParshinA. Yu. IgumenovV. A. Timofeev Electronic Properties of Semiconductors 16 April 2015 Pages: 423 - 427
Low-temperature conductivity in CuGaS2 single crystals N. A. AbdullaevKh. V. AliguliyevaT. G. Kerimova Electronic Properties of Semiconductors 16 April 2015 Pages: 428 - 431
Temperature dependence of the carrier lifetime in Cd x Hg1 − x Te narrow-gap solid solutions with consideration for Auger processes N. L. BazhenovK. D. MynbaevG. G. Zegrya Electronic Properties of Semiconductors 16 April 2015 Pages: 432 - 436
Specific features of the frequency dependence of the conductivity of disordered semiconductors in the region of the crossover between transport mechanisms M. A. OrmontI. P. Zvyagin Electronic Properties of Semiconductors 16 April 2015 Pages: 437 - 441
Surface plasmon polaritons in a composite system of porous silicon and gold J. S. VainshteinD. N. GoryachevO. M. Sreseli Electronic Properties of Semiconductors 16 April 2015 Pages: 442 - 447
Energy transfer from Tb3+ to Eu2+ in Ga2S3:(Eu2+, Tb3+) crystals O. B. TagievKh. B. Ganbarova Spectroscopy, Interaction with Radiation 16 April 2015 Pages: 448 - 451
Development of a differential method for analyzing the luminescence spectra of semiconductors A. M. Emel’yanov Spectroscopy, Interaction with Radiation 16 April 2015 Pages: 452 - 455
Study of the correlation parameters of the surface structure of disordered semiconductors by the two-dimensional DFA and average mutual information methods A. V. AlpatovS. P. VikhrovN. V. Rybina Surfaces, Interfaces, and Thin Films 16 April 2015 Pages: 456 - 460
Temperature dependences of the contact resistivity in ohmic contacts to n +-InN A. V. SachenkoA. E. BelyaevV. N. Sheremet Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 April 2015 Pages: 461 - 471
Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide E. I. GoldmanA. I. LevashovaG. V. Chucheva Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 April 2015 Pages: 472 - 478
Photoluminescence of heterostructures with GaP1 − x N x and GaP1 − x − y N x As y layers grown on GaP and Si substrates by molecular-beam epitaxy A. A. LazarenkoE. V. NikitinaA. Yu. Egorov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 April 2015 Pages: 479 - 482
Quantum Hall effect in semiconductor systems with quantum dots and antidots Ya. M. BeltukovA. A. Greshnov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 April 2015 Pages: 483 - 491
Role of surface self-trapped excitons in the energy relaxation of photoexcited silicon nanocrystals A. V. GertI. N. Yassievich Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 April 2015 Pages: 492 - 497
Conditions of steady switching in phase-transition memory cells A. I. PopovS. M. SalnikovYu. V. Anufriev Amorphous, Vitreous, and Organic Semiconductors 16 April 2015 Pages: 498 - 503
Plasma waves in a graphene-based superlattice in the presence of a high static electric field S. Yu. GlazovA. A. KovalevN. E. Mescheryakova Carbon Systems 16 April 2015 Pages: 504 - 507
Electroluminescent 1.5-μm light-emitting diodes based on p +-Si/NC β-FeSi2/n-Si structures T. S. ShamirzaevN. G. GalkinA. V. Latyshev Physics of Semiconductor Devices 16 April 2015 Pages: 508 - 512
A model predicting sheet charge density and threshold voltage with dependence on interface states density in LM-InAlN/GaN MOSHEMT Devashish PandeyT. R. Lenka Physics of Semiconductor Devices 16 April 2015 Pages: 513 - 518
Surface-barrier photoconverters with graded-gap layers in the space-charge region Yu. N. BobrenkoS. Yu. PaveletsN. V. Yaroshenko Physics of Semiconductor Devices 16 April 2015 Pages: 519 - 523
Admittance spectroscopy of solar cells based on GaPNAs layers A. I. BaranovA. S. GudovskikhA. Yu. Egorov Physics of Semiconductor Devices 16 April 2015 Pages: 524 - 528
Electron-phonon interaction in three-barrier nanosystems as active elements of quantum cascade detectors N. V. TkachJu. A. SetiYu. B. Grynyshyn Physics of Semiconductor Devices 16 April 2015 Pages: 529 - 539
Irradiation of 4H-SiC UV detectors with heavy ions E. V. KalininaA. A. LebedevV. A. Skuratov Physics of Semiconductor Devices 16 April 2015 Pages: 540 - 546
Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties A. S. SaidovSh. N. UsmonovM. S. Saidov Fabrication, Treatment, and Testing of Materials and Structures 16 April 2015 Pages: 547 - 550
Anisotropic shaping of macroporous silicon E. V. AstrovaA. V. ParfenevaYu. A. Zharova Fabrication, Treatment, and Testing of Materials and Structures 16 April 2015 Pages: 551 - 558
MBE growth of GaP on a Si substrate M. S. SobolevA. A. LazarenkoA. Yu. Egorov Fabrication, Treatment, and Testing of Materials and Structures 16 April 2015 Pages: 559 - 562