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Surface-barrier photoconverters with graded-gap layers in the space-charge region

  • Physics of Semiconductor Devices
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Abstract

A novel possibility of controlling the parameters of p-Cu1.8S-n-II-VI surface-barrier structures by embedding a thin graded-gap layer into a photoconverter space-charge region (SCR) is implemented. The feature of quasi-electric fields built in the SCR, i.e., the fact that an increase in the drift field for minority carriers can be accompanied by a decrease in the potential barrier for majority carriers, is considered. The proper choice of the parameters of the Cd x Zn1 − x S graded-gap layer embedded in the Cu1.8S-ZnS structure SCR made it possible to double the quantum efficiency in the ultraviolet spectral region. For Cu1.8S-CdS photoconverters with a (CdS) x (ZnSe)1 − x intermediate layer, dark diode currents are decreased by three orders of magnitude while retaining a high quantum efficiency.

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Authors and Affiliations

  1. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 41, Kyiv, 03028, Ukraine

    Yu. N. Bobrenko, S. Yu. Pavelets, A. M. Pavelets, T. V. Semikina & N. V. Yaroshenko

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  1. Yu. N. Bobrenko
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  2. S. Yu. Pavelets
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  3. A. M. Pavelets
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  4. T. V. Semikina
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  5. N. V. Yaroshenko
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Correspondence to S. Yu. Pavelets.

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Original Russian Text © Yu.N. Bobrenko, S.Yu. Pavelets, A.M. Pavelets, T.V. Semikina, N.V. Yaroshenko, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 4, pp. 529–533.

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Bobrenko, Y.N., Pavelets, S.Y., Pavelets, A.M. et al. Surface-barrier photoconverters with graded-gap layers in the space-charge region. Semiconductors 49, 519–523 (2015). https://doi.org/10.1134/S1063782615040089

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  • DOI: https://doi.org/10.1134/S1063782615040089

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