Abstract
CuGaS2 single crystals are grown by the Bridgman-Stockbarger method. X-ray diffraction and Raman studies are performed. It is shown that the conductivity at low temperatures has an activation mechanism: in the range of 100–300 K, impurity conduction with an acceptor activation energy of 12 meV dominates; at temperatures below 100 K, Mott conductivity, i.e., so-called hopping conductivity with a variable hop length prevails. The density of localized states and the average carrier hop length are estimated.
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Original Russian Text © N.A. Abdullaev, Kh.V. Aliguliyeva, L.N. Aliyeva, I. Qasimoglu, T.G. Kerimova, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 4, pp. 440–443.
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Abdullaev, N.A., Aliguliyeva, K.V., Aliyeva, L.N. et al. Low-temperature conductivity in CuGaS2 single crystals. Semiconductors 49, 428–431 (2015). https://doi.org/10.1134/S1063782615040028
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DOI: https://doi.org/10.1134/S1063782615040028