Abstract
The structural and optical properties of heterostructures containing GaP1 − x N x ternary and GaP1 − x − y N x As y quaternary alloy layers are discussed. The heterostructures are grown by molecular-beam epitaxy on GaP and Si substrates. The structures are studied by the high-resolution X-ray diffraction technique and photoluminescence measurements in a wide temperature range from 10 to 300 K. In the low-temperature photoluminescence spectra of the alloys with a low nitrogen fraction (x < 0.007), two clearly resolved narrow lines attributed to the localized states of nitrogen pairs and the phonon replicas of these lines are observed.
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Original Russian Text © A.A. Lazarenko, E.V. Nikitina, M.S. Sobolev, E.V. Pirogov, D.V. Denisov, A.Yu. Egorov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 4, pp. 489–493.
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Lazarenko, A.A., Nikitina, E.V., Sobolev, M.S. et al. Photoluminescence of heterostructures with GaP1 − x N x and GaP1 − x − y N x As y layers grown on GaP and Si substrates by molecular-beam epitaxy. Semiconductors 49, 479–482 (2015). https://doi.org/10.1134/S1063782615040144
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DOI: https://doi.org/10.1134/S1063782615040144