Temperature dependence of the coefficient of linear thermal expansion of single-crystal SmS V. V. KaminskiĭS. M. LuguevS. M. Solov’ev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1 - 4
Accumulation of structural defects in silicon irradiated with PF n + cluster ions with medium energies A. Yu. AzarovA. I. Titov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 5 - 10
Electrical properties of ZnSiAs2 irradiated with protons V. N. BrudnyĭT. V. Vedernikova Electronic and Optical Properties of Semiconductors Pages: 11 - 14
Frenkel thermal-field effect in MnGaInS4 layered single crystals N. N. NiftievO. B. Tagiev Electronic and Optical Properties of Semiconductors Pages: 15 - 17
Contraction of the conducting region in an intrinsic semiconductor due to joule self-heating F. N. RybakovA. V. MelkikhA. A. Povzner Electronic and Optical Properties of Semiconductors Pages: 18 - 21
Electrical properties and structure of chalcogenide glasses containing bivalent tin G. A. BordovskiĭR. A. CastroE. I. Terukov Electronic and Optical Properties of Semiconductors Pages: 22 - 25
Optical properties of CuIn5Se8 single crystals I. V. Bodnar’ Electronic and Optical Properties of Semiconductors Pages: 26 - 29
Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B) N. A. PoklonskiS. A. VyrkoA. G. Zabrodskii Electronic and Optical Properties of Semiconductors Pages: 30 - 36
Capacitance-voltage characteristics of the p-Cd0.27Hg0.73Te-based structures with a wide-gap graded-gap surface layer V. V. Vasil’evYu. P. Mashukov Semiconductor Structures, Interfaces, and Surfaces Pages: 37 - 42
Photoelectric phenomena in the Cu (Al, In)/p-CuIn3Se5 Schottky barriers I. V. Bodnar’V. Yu. RudYu. V. Rud’ Semiconductor Structures, Interfaces, and Surfaces Pages: 43 - 46
Schottky barriers based on n-In2S3 films obtained by laser-induced evaporation I. V. Bodnar’V. A. PolubokYu. V. Rud’ Semiconductor Structures, Interfaces, and Surfaces Pages: 47 - 51
Photoelectric properties of In/In2Se3 structures G. A. Il’chukV. V. Kus’nézhV. O. Ukrainets Semiconductor Structures, Interfaces, and Surfaces Pages: 52 - 54
Specific features of molecules’ pyrolysis on the epitaxial surface in the case of growth of the Si1 − x Ge x layers from hydrides in vacuum L. K. OrlovS. V. Ivin Semiconductor Structures, Interfaces, and Surfaces Pages: 55 - 65
Efficient second-harmonic generation in a double-quantum-well structure A. Zh. KhachatrianD. M. SedrakianV. A. Khoetsyan Low-Dimensional Systems Pages: 66 - 72
Lateral ordering of quantum dots and wires in the (In,Ga)As/GaAs(100) multilayer structures V. V. Strel’chukP. M. LytvynG. J. Salamo Low-Dimensional Systems Pages: 73 - 80
Atomic defects of the walls and the electronic structure of molybdenum disulfide nanotubes A. N. EnyashinA. L. Ivanovskiĭ Low-Dimensional Systems Pages: 81 - 86
Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures N. I. BochkarevaD. V. TarkhinYu. G. Shreter Low-Dimensional Systems Pages: 87 - 93
Potential of using the Cd0.8Hg0.2Te alloy in solar cells L. A. KosyachenkoV. V. KulchinskyV. M. Sklyarchuk Physics of Semiconductor Devices Pages: 94 - 102
Silicon-on-insulator nanotransistors with two independent gates O. V. NaumovaM. A. Il’nitskiĭV. P. Popov Physics of Semiconductor Devices Pages: 103 - 109
A method for calculating the transient time of a multi-stage thermoelectric cooler Yu. I. RavichA. N. Gordienko Physics of Semiconductor Devices Pages: 110 - 114
Instability of characteristics of SiC detectors subjected to extreme fluence of nuclear particles A. M. IvanovN. B. StrokanA. A. Lebedev Physics of Semiconductor Devices Pages: 115 - 119