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Potential of using the Cd0.8Hg0.2Te alloy in solar cells

  • Physics of Semiconductor Devices
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Abstract

Surface-barrier diodes based on the CdxHg1−x Te alloy (x ∼ 0.8) sensitive in the wavelength range 0.3–1.1 μm, which were obtained by etching (bombardment) of the surface of the p-type crystal with argon ions, are studied. Using the measured spectral absorption and reflection curves, as well as the parameters of the diode structure, which were found from electrical characteristics, the spectra of photoelectric quantum efficiency of diodes are calculated. The results of the calculation of photoelectric parameters of the Gd0.8Hg0.2Te-based diodes are given in comparison with the CdTe-based and Si-based solar cells. For the AM1.5 solar irradiation conditions, the open-circuit voltage and short-circuit current, as well as values of limiting efficiency, are determined.

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Authors and Affiliations

  1. Chernovtsy National University, Chernovtsy, 58012, Ukraine

    L. A. Kosyachenko, V. V. Kulchinsky, S. Yu. Paranchych & V. M. Sklyarchuk

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  1. L. A. Kosyachenko
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  2. V. V. Kulchinsky
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  3. S. Yu. Paranchych
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  4. V. M. Sklyarchuk
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Additional information

Original Russian Text © L.A. Kosyachenko, V.V. Kulchinsky, S.Yu. Paranchych, V.M. Sklyarchuk, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 1, pp. 95–103.

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Kosyachenko, L.A., Kulchinsky, V.V., Paranchych, S.Y. et al. Potential of using the Cd0.8Hg0.2Te alloy in solar cells. Semiconductors 41, 94–102 (2007). https://doi.org/10.1134/S1063782607010186

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  • DOI: https://doi.org/10.1134/S1063782607010186

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