Abstract
The electrical properties of p-ZnSiAs2 irradiated with protons (energy E = 5 MeV, dose D ≤ 2 × 1017 cm−2) are studied. Experimental data and results of calculations are used to estimate the limiting position of the Fermi level in the band gap of the irradiated material (at the midgap E g/2). The thermal stability of radiation defects in the temperature range from 20 to 610°C was analyzed.
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References
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Original Russian Text © V.N. Brudnyĭ, T.V. Vedernikova, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 1, pp. 13–16.