Abstract
Two valence states of tin atoms are identified by Mössbauer and X-ray photoelectron spectroscopy in (As2Se3)1−z (GeSe) z−x (SnSe) x glasses; it is shown that the presence of bivalent tin in the structural network of a glass does not give rise to impurity conductivity and impurity optical absorption. It is suggested to regard (As2Se3)1−z (GeSe) z−x (SnSe) x and (As2Se3)1−z (GeSe2) z−x (SnSe2) x glasses as semiconductor solid solutions whose electrical properties depend both on the electrical properties of the starting components and on the composition of the solid solutions.
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References
K. D. Tséndin, Electronic Phenomena in Chalcogenide Vitreous Semiconductors, Ed. by K. D. Tséndin (Nauka, St. Petersburg, 1996), p. 34 [in Russian].
P. P. Seregin and A. A. Andreev, in Mössbauer Spectroscopy of Frozen Solutions, Ed. by A. Vértes and D. L. Nagy (Akadémiai Kiadó, Budapest, 1990; Mir, Moscow, 1998).
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Original Russian Text © G.A. Bordovskiĭ, R.A. Castro, P.P. Seregin, E.I. Terukov, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 1, pp. 23–26.
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Bordovskiĭ, G.A., Castro, R.A., Seregin, P.P. et al. Electrical properties and structure of chalcogenide glasses containing bivalent tin. Semiconductors 41, 22–25 (2007). https://doi.org/10.1134/S106378260701006X
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DOI: https://doi.org/10.1134/S106378260701006X