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Contraction of the conducting region in an intrinsic semiconductor due to joule self-heating

  • Electronic and Optical Properties of Semiconductors
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Abstract

A model of the distribution of the current density and temperature in a semiconductor sample is developed. It is shown that the distribution of the temperature in the sample can have a point of inflection that separates the “hot” and “cold” regions. The location of the point of inflection depends on the current: the larger the current through the sample, the closer to the center of the sample is the point of inflection.

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Authors and Affiliations

  1. Ural Polytechnical Institute, Ural State Technical University, Yekaterinburg, 620002, Russia

    F. N. Rybakov, A. V. Melkikh & A. A. Povzner

Authors
  1. F. N. Rybakov
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  2. A. V. Melkikh
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  3. A. A. Povzner
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Additional information

Original Russian Text © F.N. Rybakov, A.V. Melkikh, A.A. Povzner, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 1, pp. 20–22.

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Rybakov, F.N., Melkikh, A.V. & Povzner, A.A. Contraction of the conducting region in an intrinsic semiconductor due to joule self-heating. Semiconductors 41, 18–21 (2007). https://doi.org/10.1134/S1063782607010058

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  • DOI: https://doi.org/10.1134/S1063782607010058

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