Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices Jennifer L. M. RuppIlia ValovDaniele Ielmini EditorialNotes 23 December 2017 Pages: 1 - 3
Memristive computing devices and applications Mohammed A. ZidanAn ChenWei D. Lu OriginalPaper 01 September 2017 Pages: 4 - 20
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication Hong-Yu ChenStefano BrivioH.-S. Philip Wong OriginalPaper 24 June 2017 Pages: 21 - 38
Modeling resistive switching materials and devices across scales Stefano AmbrogioBlanka Magyari-KöpeAlejandro Strachan OriginalPaper 09 June 2017 Pages: 39 - 60
Review of mechanisms proposed for redox based resistive switching structures I. Riess OriginalPaper 27 June 2017 Pages: 61 - 72
Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices Yuchao YangYasuo TakahashiA. J. Kenyon OriginalPaper 11 February 2017 Pages: 73 - 93
Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups Mario LanzaUmberto CelanoFeng Miao OriginalPaper 28 April 2017 Pages: 94 - 108
SiO2 based conductive bridging random access memory Wenhao ChenStefan TappertzhofenMichael N. Kozicki OriginalPaper 15 March 2017 Pages: 109 - 131
Reset switching statistics of TaOx-based Memristor Xiaojuan LianMiao WangFeng Miao OriginalPaper 02 June 2017 Pages: 132 - 136
Effect of O2- migration in Pt/HfO2/Ti/Pt structure Maxime ThammasackGiovanni De MicheliPierre-Emmanuel Gaillardon OriginalPaper 01 April 2017 Pages: 137 - 142
Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer Tohru TsuruokaTsuyoshi HasegawaMasakazu Aono OriginalPaper 14 January 2017 Pages: 143 - 156
Interface-type resistive switching in perovskite materials S. BagdzeviciusK. MaasM. Burriel OriginalPaper 20 May 2017 Pages: 157 - 184
Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition Juan Carlos Gonzalez-RosilloRafael Ortega-HernandezTeresa Puig OriginalPaper 31 July 2017 Pages: 185 - 196
Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature M. KubicekS. TaiblJ. Fleig OriginalPaper Open access 03 April 2017 Pages: 197 - 209
Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions Xue-Bing YinZheng-Hua TanXin Guo OriginalPaper 27 April 2017 Pages: 210 - 222
Resistive switching memory using biomaterials Niloufar Raeis-HosseiniJang-Sik Lee OriginalPaper 30 September 2017 Pages: 223 - 238
Optical memristive switches Ueli KochClaudia HoessbacherJuerg Leuthold OriginalPaper Open access 07 March 2017 Pages: 239 - 250
