Abstract
A series of Mn1.2Co1.5Ni0.3O4 spinel polycrystalline negative temperature coefficient (NTC) thin films on amorphous (SiO2 and Al2O3) and crystalline (Si3N4 and AlN) substrates was prepared using the direct current sputtering technique. Electron microscopy studies reveal the morphology–substrate dependence of films grown at the optimum temperature of 200 °C, with grain size increasing in the order of Si3N4 < SiO2 < AlN < Al2O3. In conjunction with XPS, both the effects of film thickness conduction and the small polaron hopping conduction mechanism on electrical properties were studied. The film thickness (205, 235, 240, and 330 nm for films grown on SiO2, Al2O3, Si3N4, and AlN substrates, respectively) showed a direct correlation to the hopping frequency of carriers in octahedron sites and affected the materials’ constant, B, and temperature coefficient of resistance, α25. The resistivity, ρ, of films (88.7, 202, 116.7, 279 Ω cm on SiO2, Al2O3, Si3N4, AlN substrates, respectively) was found to conform to the change rule of the change of the Mn3+ and Mn4+ ion pairs. Resistance drift values (9.39%, 6.77%, 7.37%, and 5.73% for films on SiO2, Al2O3, Si3N4, and AlN substrates, respectively) were successfully determined and suggest that films deposited on AlN substrates are the most stable for its thickness. The results presented in this paper will help guide the development and commercialization of thin film-based thermistors and development of the NTC thermistors industry.
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Acknowledgements
This work was supported by the Technology Talents Project of Tianshan Youth Plan (2019Q082); the Youth Innovation Promotion Association CAS (2021433); the Xinjiang Key Laboratory Foundation (2020D04043); the Natural Science Foundation of Xinjiang, China (Grant No. 2021D01E04); and the West Light Foundation of the CAS (Grant No. 2020-XBQNXZ-001).
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Wang, X., Kong, W., He, D. et al. Substrate-induced morphology and its effect on the electrical properties and stability of polycrystalline Mn1.2Co1.5Ni0.3O4 thin films. J Mater Sci: Mater Electron 32, 22588–22598 (2021). https://doi.org/10.1007/s10854-021-06744-2
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DOI: https://doi.org/10.1007/s10854-021-06744-2