Residual damage effects on gate contacts formed on SiC surfaces etched by using the amorphization technique Dev AlokK. MakeshwarB. Jayant Baliga OriginalPaper Pages: 108 - 112
Hopping conduction in heavily doped bulk n-type SiC W. C. MitchelA. O. EvwaeayeM. D. Roth OriginalPaper Pages: 113 - 118
Improved Ni ohmic contact on n-type 4H-SiC C. HallinR. YakimovaE. Janzén OriginalPaper Pages: 119 - 122
Doping of 3C-SiC by implantation of nitrogen at high temperatures R. LossyW. ReichertW. Skorupa OriginalPaper Pages: 123 - 127
Hollow-core screw dislocations in 6H-SiC single crystals: A test of Frank’s theory Weimin SiMichael DudleyCalvin Carter OriginalPaper Pages: 128 - 133
A silicon carbide LOCOS process using enhanced thermal oxidation by argon implantation Dev AlokB. J. Baliga OriginalPaper Pages: 134 - 136
An EPR study of defects induced in 6H-SiC by ion implantation R. C. BarklieM. CollinsW. Skorupa OriginalPaper Pages: 137 - 143
Rapid thermal annealing of ion implanted 6H-SiC by microwave processing Jason A. GardnerMulpuri V. RaoI. Ahmad OriginalPaper Pages: 144 - 150
Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates Weimin SiMichael DudleyCalvin Carter OriginalPaper Pages: 151 - 159
Low-temperature interface modification by hydrocarbon radicals in heteroepitaxy of 3C-SiC on Si clean surface Tomoaki HatayamaNorihiro TanakaHiroyuki Matsunami OriginalPaper Pages: 160 - 164
Hot-implantation of nitrogen donors into p- type α-SiC and characterization of n+-p junction N. InoueA. ItohM. Inoue OriginalPaper Pages: 165 - 171
Investigation of Co/SiC interface reaction S. W. ParkY. I. KimH. K. Baik OriginalPaper Pages: 172 - 177
Improvement of the crystallinity of 3C-SiC films by lowering the electron temperatures in the afterglow plasma region using triode plasma CVD K. YasuiN. NinagawaT. Akahane OriginalPaper Pages: 178 - 182
Free electron laser annealing of silocon carbibe Hideaki OhyamaToshiji SuzukiTakio Tomimasu OriginalPaper Pages: 183 - 186
Control of Al and B doping transients in 6H and 4H SiC grown by vapor phase epitaxy N. NordellA. SchönerM. K. Linnarsson OriginalPaper Pages: 187 - 192
Electrical properties of metal-diamond-like-nanocomposite (Me-DLN) contacts to 6H SiC K. J. SchoenJ. M. WoodallC. Venkatraman OriginalPaper Pages: 193 - 197
Hydrogen passivation in n- and p-type 6H-SiC F. RenJ. M. GrowS. J. Pearton OriginalPaper Pages: 198 - 202
Electron transport properties of quantized silicon carbide inversion layers J. B. RoldánF. GámizP. Caetujo OriginalPaper Pages: 203 - 207
Activation of nitrogen implants in 6H-SiC J. N. PanJ. A. CooperM. R. Melloch OriginalPaper Pages: 208 - 211
Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications C. C. TinY. SongT. S. Sudarshan OriginalPaper Pages: 212 - 216
Growth and characterization of GaN thin films on SiC SOI substrates A. J. StecklJ. DeveajanR. A. Stall OriginalPaper Pages: 217 - 223
Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates William G. PerryT. ZhelevaJ. J. Song OriginalPaper Pages: 224 - 231
Hot plasma chemical vapor deposition of GaN on GaAs(100) substrate J. WangZ. ZhuT. Yao OriginalPaper Pages: 232 - 236
Growth of GaBN ternary solutions by organometallic vapor phase epitaxy A. Y. PolyakovM. ShinR. M. Desrosiers OriginalPaper Pages: 237 - 242
Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN C. Y. HwangM. J. SchurmanT. Salagaj OriginalPaper Pages: 243 - 251
Gas-source molecular beam epitaxial growth and characterization of InNxP1−x on InP W. G. BiC. W. Tu OriginalPaper Pages: 252 - 256
The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD P. A. GrudowskiA. L. HolmesR. D. Dupuis OriginalPaper Pages: 257 - 261
Low resistance bilayer Nd/Al ohmic contacts on n-type GaN Ching-Ting LeeMing-Yuan YehYen-Tang Lyu OriginalPaper Pages: 262 - 265
Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes A. T. PingA. C. SchmitzJ. W. Yang OriginalPaper Pages: 266 - 271
In situ control of gan growth by molecular beam epitaxy R. HeldD. E. CrawfordP. I. Cohen OriginalPaper Pages: 272 - 280
Study of indium droplets formation on the InxGa1−xN films by single crystal x-ray diffraction Hongqiang LuMalathi ThothathiriIshawara Bhat OriginalPaper Pages: 281 - 284
Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire L. T. RomanoB. S. KrusorT. D. Moustakas OriginalPaper Pages: 285 - 289
Formation of dry etched gratings in GaN and InGaN J. W. LeeJ. HongP. F. Sciortino OriginalPaper Pages: 290 - 293
MOVPE growth and optical properties of gan deposited on c-plane sapphire O. BriotB. GilM. Renucci OriginalPaper Pages: 294 - 300
Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma H. P. GillisD. A. ChoutovR. F. Davis OriginalPaper Pages: 301 - 305
Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition X. LiA. M. JonesJ. J. Coleman OriginalPaper Pages: 306 - 310
Tunneling current and electroluminescence in InGaN: Zn,Si/AlGaN/GaN blue light emitting diodes Petr G. EliseevPiotr PerlinMarek Osiński OriginalPaper Pages: 311 - 319
Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio Atsushi NakadairaHidenao Tanaka OriginalPaper Pages: 320 - 324
Photoluminescence characteristics of GaN/lnGaN/GaN quantum wells I. K. ShmaginJ. F. MuthS. P. Den Baars OriginalPaper Pages: 325 - 329
Improvement of metal-semiconductor-metal GaN photoconductors Z. C. HuangD. B. MottD. K. Wickenden OriginalPaper Pages: 330 - 333
Ion implantation doping of OMCVD grown GaN A. EdwardsMulpuri V. RaoP. H. Chi OriginalPaper Pages: 334 - 339
