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Rapid thermal annealing of ion implanted 6H-SiC by microwave processing

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Abstract

Rapid thermal processing utilizing microwave energy has been used to anneal N, P, and Al ion-implanted 6H-SiC. The microwaves raise the temperature of the sample at a rate of 200°C/min vs 10°C/min for conventional ceramic furnace annealing. Samples were annealed in the temperature range of 1400-1700°C for 2-10 min. The implanted/annealed samples were characterized using van der Pauw Hall, Rutherford backscattering, and secondary ion mass spectrometry. For a given annealing temperature, the characteristics of the microwave-annealed material are similar to those of conventional furnace anneals despite the difference in cycle time.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, George Mason University, 22030, Fairfax, VA

    Jason A. Gardner, Mulpuri V. Rao & Y. L. Tian

  2. Oak Ridge National Laboratory, 37831, Oak Ridge, TN

    O. W. Holland & E. G. Roth

  3. National Institute of Standards and Technology, 20899, Gaithersburg, MD

    P. H. Chi

  4. FM Technologies, 22032, Fairfax, VA

    I. Ahmad

Authors
  1. Jason A. Gardner
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  2. Mulpuri V. Rao
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  3. Y. L. Tian
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  4. O. W. Holland
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  5. E. G. Roth
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  6. P. H. Chi
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  7. I. Ahmad
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Gardner, J.A., Rao, M.V., Tian, Y.L. et al. Rapid thermal annealing of ion implanted 6H-SiC by microwave processing. J. Electron. Mater. 26, 144–150 (1997). https://doi.org/10.1007/s11664-997-0141-5

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  • DOI: https://doi.org/10.1007/s11664-997-0141-5

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