Abstract
Interface reaction, phase transition, and composition were investigated for Co thin films on amorphous SiC films as a function of heat treatment (600∼1000°C). Amorphous SiC layers were grown on (001) Si substrate by magnetron sputter deposition. The SiC layers had a 1:1 stoichiometric ratio of Si to C and an amorphous structure containing microcrystals. The interface reaction between a sputter-deposited Co (250Å thick) and amorphous SiC (2000Å thick) layer on a (001) Si substrate induced by vacuum annealing at temperatures of 600–1000°C was examined. Co2Si was formed at 700°C as the first crystalline phase and CoSi at 800°C as the final stable phase of the Co/SiC interface reaction. This phase sequence of Co2Si→CoSi was interpreted in terms of the effective heat of formation and the calculated ternary Co-Si-C phase diagram, and it was consistent with the experimental results. The high formation temperature of the first crystalline Co2Si phase and no formation of a final stable CoSi2 phase are discussed in comparison with Co/Si interface reaction and related to the binding energy of the reacting materials. In addition, the behavior of free carbon remaining after the Co/SiC reaction was investigated. This free carbon moved to the top of the reacted cobalt silicide/SiC layer.
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Park, S.W., Kim, Y.I., Kwak, J.S. et al. Investigation of Co/SiC interface reaction. J. Electron. Mater. 26, 172–177 (1997). https://doi.org/10.1007/s11664-997-0145-1
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DOI: https://doi.org/10.1007/s11664-997-0145-1