Abstract
Hydrogen passivation effects are found to be much more prevalent in p-type 6H-SiC relative to n-type material. Reactivation of passivated B acceptors occurs at ~700°C, corresponding to a reactivation energy of ~3.3 eV. This is much higher than for passivated acceptors in Si, where reactivation occurs at ≤200°C. The incorporation depth of 2H from a plasma at 200°C is ≤0.1 µm in 30 min, corresponding to a diffusivity approximately two orders of magnitude lower than in Si at the same temperature. The average energy of ions in the 2H plasma has an influence on the peak concentration of incorporated deuterium and on its diffusion depth.
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Ren, F., Grow, J.M., Bhaskaran, M. et al. Hydrogen passivation in n- and p-type 6H-SiC. J. Electron. Mater. 26, 198–202 (1997). https://doi.org/10.1007/s11664-997-0150-4
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DOI: https://doi.org/10.1007/s11664-997-0150-4