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Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates

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Abstract

Biaxial strains resulting from mismatches in thermal expansion coefficients and lattice parameters in 22 GaN films grown on A1N buffer layers previously deposited on vicinal and on-axis 6H-SiC(0001) substrates were measured via changes in the c-axis lattice parameter. A Poisson’s ratio of ν = 0.18 was calculated. The bound exciton energy (EBX) was a linear function of these strains. The shift in EBX with film stress was 23 meV/GPa. Threading dislocations densities of ~1010/cm2 and ~108/em2 were determined for GaN films grown on vicinal and on-axis SiC, respectively. A 0.9% residual compressive strain at the GaN/AIN interface was observed by high resolution transmission electron microscopy (HRTEM).

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Authors and Affiliations

  1. Department of Materials Science, North Carolina State University, 27695, Raleigh, NC

    William G. Perry, T. Zheleva, M. D. Bremser & R. F. Davis

  2. Center for Laser Research, Oklahoma State University, 74078, Stillwater, OK

    W. Shan & J. J. Song

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  1. William G. Perry
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  2. T. Zheleva
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  3. M. D. Bremser
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  4. R. F. Davis
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  5. W. Shan
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  6. J. J. Song
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Perry, W.G., Zheleva, T., Bremser, M.D. et al. Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates. J. Electron. Mater. 26, 224–231 (1997). https://doi.org/10.1007/s11664-997-0155-z

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  • DOI: https://doi.org/10.1007/s11664-997-0155-z

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