Elastic and plastic contributions to X-ray Line broadening of InGaAsP/InP Heterostructures Jongwon LeeWilliam E. MayoThomas Tsakalakos OriginalPaper Pages: 867 - 875
Electrical characterisation of Cu-Diffusedn-GaAs epitaxial layers using optical deep level transient spectroscopy A. VenterF. D. AuretC. A. B. Ball OriginalPaper Pages: 877 - 882
Importance of the choice of the profile model for ap-n junction in the location of deep levels J. A. Jimenez-TejadaJ. A. Lopez-VillanuevaJ. E. Carceller OriginalPaper Pages: 883 - 886
Properties and use of cycled grown OMVPE GaAs:Zn, GaAs:Se, and GaAs:Si layers for high-conductance GaAs tunnel junctions R. VenkatasubramanianM. L. TimmonsS. Asher OriginalPaper Pages: 893 - 899
Effects of electrode geometry and polarity on the occurrence of negative peaks in optical transient current spectroscopy applied to semi-insulating gallium arsenide D. HuiH. KatoL. Young OriginalPaper Pages: 901 - 909
An investigation of molecular beam epitaxy “in-situ” grown Ag/GaAs schottky diodes Y. H. WangM. P. HoungJ. P. Mannaerts OriginalPaper Pages: 911 - 915
On the source of scatter in contact resistance data S. S. WintertonT. J. SmyN. G. Tarr OriginalPaper Pages: 917 - 921
Co, Fe, and Ti Implants in InGaAs and Co Implants in InP at 200° C Mulpuri V. RaoSadanand M. GulwadiHarry B. Dietrich OriginalPaper Pages: 923 - 928
An initial investigation of the microstructure of Ti/Pd/Au ohmic contact structures for gaas microwave devices applications Bernard M. HenryAnne E. Staton-BevanSukhdev S. Gill OriginalPaper Pages: 929 - 933