Abstract
Heavily doped GaAs layers for high conductance GaAs tunnel junctions have been grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) using Zn as the dopant for thep + regions and either Se or Si as the dopant for then + regions. At a growth temperature of 700° C using a “cycled” growth technique for the Zn-dopedp ++-GaAs layer, both the conductance and the peak current density of the tunnel diode has been increased by a factor of ∼65 compared to a tunnel junction with a continuously grown Zn-doped p+-GaAs. The conductance of the tunnel junction, which is maximized at a growth temperature of 650° C using cycled growth, is comparable to the best reported values for tunnel junctions grown by molecular beam epitaxy. Cycled growths forn + Se-doped regions are found to reduce the conductance of a tunnel junction by more than two orders of magnitude. However, cycled growth for the n+-GaAs regions with Si doping show no conductance degradation. A model based on incorporation sites of these dopants during OMVPE growth of GaAs is presented to account for the experimental observations.
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Venkatasubramanian, R., Timmons, M.L., Colpitts, T.S. et al. Properties and use of cycled grown OMVPE GaAs:Zn, GaAs:Se, and GaAs:Si layers for high-conductance GaAs tunnel junctions. J. Electron. Mater. 21, 893–899 (1992). https://doi.org/10.1007/BF02665546
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DOI: https://doi.org/10.1007/BF02665546