1. Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals

   • A. A. Gladilin
   • N. N. Ilichev
   • G. G. Novikov

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 23 April 2019 Pages: 1 - 8

   

2. Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium

   • V. F. Bannaya
   • E. V. Nikitina

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 23 April 2019 Pages: 9 - 13

   

3. Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals

   • R. K. Yafarov

   SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 14 - 21

   

4. Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping

   • A. N. Gruzintsev
   • A. N. Redkin

   SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 22 - 27

   

5. Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures

   • N. A. Torkhov

   SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 28 - 36

   

6. Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi_{1 –x}Sb_x)₂Te₃ Topological Insulators

   • A. V. Galeeva
   • M. A. Gomanko
   • D. R. Khokhlov

   SURFACES, INTERFACES, AND THIN FILMS 23 April 2019 Pages: 37 - 41

   

7. Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements

   • E. I. Goldman
   • N. F. Kuharskaya
   • G. V. Chucheva

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 23 April 2019 Pages: 42 - 45

   

8. Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE

   • M. P. Mikhailova
   • E. V. Ivanov
   • Yu. P. Yakovlev

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 23 April 2019 Pages: 46 - 50

   

9. The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films

   • M. A. Elistratova
   • I. B. Zakharova
   • O. M. Sreseli

   AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 23 April 2019 Pages: 51 - 54

   

10. Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters

    • S. M. Peshcherova
    • E. B. Yakimov
    • R. V. Presnyakov

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 55 - 59

    

11. Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining

    • I. E. Tyschenko
    • E. D. Zhanaev
    • V. P. Popov

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 60 - 64

    

12. Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial In_xGa_{1 –x}N/Si(111) Heterostructures with a Nanocolumnar Film Morphology

    • P. V. Seredin
    • D. L. Goloshchapov
    • M. Rinke

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 65 - 71

    

13. Investigation into the Memristor Effect in Nanocrystalline ZnO Films

    • V. A. Smirnov
    • R. V. Tominov
    • O. A. Ageev

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 23 April 2019 Pages: 72 - 77

    

14. A Chainlike Model of the Zigzag Edge Decoration of Graphene

    • S. Yu. Davydov

    CARBON SYSTEMS 23 April 2019 Pages: 78 - 84

    

15. On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect

    • E. I. Goldman
    • A. Nabiev
    • G. V. Chucheva

    PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 85 - 88

    

16. Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis

    • G. S. Khrypunov
    • A. V. Meriuts
    • M. G Khrypunov

    PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 89 - 95

    

17. Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell

    • A. A. Svintsov
    • E. B. Yakimov
    • Yu. M. Kuznetsov

    PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 96 - 98

    

18. Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well

    • N. I. Bochkareva
    • A. M. Ivanov
    • Y. G. Shreter

    PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 99 - 105

    

19. Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure

    • N. D. Kuzmichev
    • M. A. Vasyutin

    PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 106 - 109

    

20. Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO₂ Interface in a MOS Transistor

    • N. A. Kulikov
    • V. D. Popov

    PHYSICS OF SEMICONDUCTOR DEVICES 23 April 2019 Pages: 110 - 113

    

21. Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence

    • G. V. Li
    • E. V. Astrova
    • A. I. Lihachev

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 114 - 126

    

22. Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method

    • V. G. Shchukin
    • R. G. Sharafutdinov
    • V. O. Konstantinov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 127 - 131

    

23. Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe

    • V. A. Shvets
    • I. A. Azarov
    • S. V. Rykhlitsky

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 23 April 2019 Pages: 132 - 137