1. Electronic structure of Pt-substituted clathrate silicides Ba₈Pt _x Si_46–x (x = 4–6)

   • N. A. Borshch

   Electronic Properties of Semiconductors 15 May 2016 Pages: 427 - 431

2. Dependence of mobility on the electron concentration upon scattering at polar optical phonons in A^III–N nitrides

   • S. I. Borisenko

   Electronic Properties of Semiconductors 15 May 2016 Pages: 432 - 434

3. Theory of the anomalous diffusion of carriers in disordered organic materials under conditions of the CELIV experiment

   • V. R. Nikitenko
   • M. M. Amrakulov
   • M. D. Khan

   Electronic Properties of Semiconductors 15 May 2016 Pages: 435 - 439

4. Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation

   • A. N. Akimov
   • A. E. Klimov
   • V. S. Epov

   Electronic Properties of Semiconductors 15 May 2016 Pages: 440 - 446

5. On the thermoelectric properties and band gap of silicon–germanium alloys in the high-temperature region

   • P. N. Inglizian
   • V. K. Mikheyev
   • E. R. Shchedrov

   Electronic Properties of Semiconductors 15 May 2016 Pages: 447 - 448

6. Features of photoinduced magnetism in some yttrium–iron-garnet single crystals

   • N. V. Vorob’eva
   • V. B. Mityukhlyaev

   Electronic Properties of Semiconductors 15 May 2016 Pages: 449 - 452

7. Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons

   • S. E. Kumekov
   • A. T. Mustafin
   • S. S. Mussatay

   Spectroscopy, Interaction With Radiation 15 May 2016 Pages: 453 - 456

8. Induced surface states of the ultrathin Ba/3C-SiC(111) interface

   • G. V. Benemanskaya
   • P. A. Dementev
   • S. N. Timoshnev

   Surfaces, Interfaces, and Thin Films 15 May 2016 Pages: 457 - 461

9. Impact ionization in nonuniformly heated silicon p ⁺–n–n ⁺ and n ⁺–p–p ⁺ structures

   • A. M. Musaev

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 May 2016 Pages: 462 - 465

10. Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime

    • N. T. Bagraev
    • E. I. Chaikina
    • A. M. Malyarenko

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 May 2016 Pages: 466 - 477

11. Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire

    • Haddou El Ghazi
    • Anouar Jorio

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 May 2016 Pages: 478 - 481

12. Gaussian approximation of the spectral dependence of the absorption spectrum in polymer semiconductors

    • V. V. Malov
    • A. R. Tameev
    • A. V. Vannikov

    Amorphous, Vitreous, and Organic Semiconductors 15 May 2016 Pages: 482 - 486

13. “Dimensional” effect due to the matrix isolation of luminescent composites of polyphenylquinolines

    • E. L. Alexandrova
    • T. N. Nekrasova
    • V. M. Svetlichnyi

    Amorphous, Vitreous, and Organic Semiconductors 15 May 2016 Pages: 487 - 493

14. Polytype inclusions and polytype stability in silicon-carbide crystals

    • D. D. Avrov
    • A. O. Lebedev
    • Yu. M. Tairov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 15 May 2016 Pages: 494 - 501

15. Prediction of the stability and electronic properties of carbon nanotori synthesized by a high-voltage pulsed discharge in ethanol vapor

    • O. E. Glukhova
    • V. A. Kondrashov
    • M. M. Slepchenkov

    Carbon Systems 15 May 2016 Pages: 502 - 507

16. Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se₂ thin-film solar cells

    • L. A. Kosyachenko
    • V. Yu. Lytvynenko
    • O. L. Maslyanchuk

    Physics of Semiconductor Devices 15 May 2016 Pages: 508 - 516

17. Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates

    • S. A. Mintairov
    • V. M. Emelyanov
    • N. A. Kalyuzhnyy

    Physics of Semiconductor Devices 15 May 2016 Pages: 517 - 522

18. Simulation of the real efficiencies of high-efficiency silicon solar cells

    • A. V. Sachenko
    • A. I. Skrebtii
    • I. O. Sokolovskyi

    Physics of Semiconductor Devices 15 May 2016 Pages: 523 - 529

19. On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO _x :H (0 < x < 2) with time-modulated dc magnetron plasma

    • Yu. K. Undalov
    • E. I. Terukov
    • I. N. Trapeznikova

    Physics of Semiconductor Devices 15 May 2016 Pages: 530 - 540

20. On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy

    • Sh. Sh. Sharofidinov
    • V. I. Nikolaev
    • A. E. Romanov

    Fabrication, Treatment, and Testing of Materials and Structures 15 May 2016 Pages: 541 - 544

21. Specific features of doping with antimony during the ion-beam crystallization of silicon

    • A. S. Pashchenko
    • S. N. Chebotarev
    • V. A. Irkha

    Fabrication, Treatment, and Testing of Materials and Structures 15 May 2016 Pages: 545 - 548

22. Optical and structural properties of Cu₂ZnSnS₄ thin films obtained by pulsed laser deposition in a H₂S atmosphere with subsequent annealing in a N₂ atmosphere

    • G. D. Teterina
    • V. N. Nevolin
    • P. E. Teterin

    Fabrication, Treatment, and Testing of Materials and Structures 15 May 2016 Pages: 549 - 554

23. Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy

    • P. A. Averichkin
    • A. A. Donskov
    • I. A. Belogorokhov

    Fabrication, Treatment, and Testing of Materials and Structures 15 May 2016 Pages: 555 - 558

24. Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode

    • I. S. Vasil’evskii
    • S. S. Pushkarev
    • O. S. Kolentsova

    Fabrication, Treatment, and Testing of Materials and Structures 15 May 2016 Pages: 559 - 565