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Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons

  • Spectroscopy, Interaction With Radiation
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Abstract

It is shown that modulation of the superluminescence intensity on a characteristic time scale on the order of a few picoseconds may occur in a semiconductor because of relaxation oscillations that result from the “healing” of local perturbations of the quasi-Fermi distribution of nonequilibrium electrons in energy space. The conditions for observing this effect in GaAs are estimated.

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Authors and Affiliations

  1. Kazakh National Technical University, Almaty, 050013, Kazakhstan

    S. E. Kumekov, A. T. Mustafin & S. S. Mussatay

Authors
  1. S. E. Kumekov
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  2. A. T. Mustafin
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  3. S. S. Mussatay
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Correspondence to S. E. Kumekov.

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Original Russian Text © S.E. Kumekov, A.T. Mustafin, S.S. Mussatay, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 4, pp. 461–464.

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Kumekov, S.E., Mustafin, A.T. & Mussatay, S.S. Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons. Semiconductors 50, 453–456 (2016). https://doi.org/10.1134/S106378261604014X

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  • DOI: https://doi.org/10.1134/S106378261604014X

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