Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy

Abstract

The results of using carbidsiliconoxide (a-C:SiO1_.5) films with a thickness of 30–60 nm, produced by the pyrolysis annealing of oligomethylsilseskvioksana (CH₃–SiO_1.5) _n with cyclolinear (staircased) molecular structure, as intermediate films in the hydride vapor phase epitaxy of gallium nitride on polycrystalline CVD-diamond substrates are presented. In the pyrolysis annealing of (CH₃–SiO_1.5) _n films in an atmosphere of nitrogen at a temperature of 1060°C, methyl radicals are carbonized to yield carbon atoms chemically bound to silicon. In turn, these atoms form a SiC monolayer on the surface of a-C:SiO_1.5 films via covalent bonding with silicon. It is shown that GaN islands grow on such an intermediate layer on CVD-polydiamond substrates in the process of hydride vapor phase epitaxy in a vertical reactor from the GaCl–NH₃–N₂ gas mixture.