Abstract
A method of doping during the growth of thin films by ion-beam crystallization is proposed. By the example of Si and Sb, the possibility of controllably doping semiconductors during the ion-beam crystallization process is shown. A calibrated temperature dependence of the antimony vapor flow rate in the range from 150 to 400°C is obtained. It is established that, an increase in the evaporator temperature above 200°C brings about the accumulation of impurities in the layer growth direction. Silicon layers doped with antimony to a concentration of 1018 cm–3 are grown. It is shown that, as the evaporator temperature is increased, the efficiency of the activation of antimony in silicon nonlinearly decreases from ~100 to ~10–3.
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Original Russian Text © A.S. Pashchenko, S.N. Chebotarev, L.S. Lunin, V.A. Irkha, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 4, pp. 553–556.
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Pashchenko, A.S., Chebotarev, S.N., Lunin, L.S. et al. Specific features of doping with antimony during the ion-beam crystallization of silicon. Semiconductors 50, 545–548 (2016). https://doi.org/10.1134/S1063782616040199
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DOI: https://doi.org/10.1134/S1063782616040199