1. A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy

   • S. S. Khludkov
   • I. A. Prudaev
   • I. V. Ivonin

   Atomic Structure and Nonelectronic Propertties of Semiconductors 18 August 2010 Pages: 975 - 977

2. Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions

   • G. A. Bordovsky
   • P. V. Gladkikh
   • E. I. Terukov

   Atomic Structure and Nonelectronic Propertties of Semiconductors 18 August 2010 Pages: 978 - 982

3. Interaction of copper impurity with radiation defects in silicon doped with boron

   • N. A. Yarykin
   • J. Weber

   Atomic Structure and Nonelectronic Propertties of Semiconductors 18 August 2010 Pages: 983 - 986

4. Electron structure and spectral characteristics of Cd-substituted Ge-based clathrates

   • N. A. Borshch
   • N. S. Pereslavtseva
   • S. I. Kurganskii

   Electrical and Optical Properties of Semiconductors 18 August 2010 Pages: 987 - 992

5. Study of main HgMnZnTe band parameters

   • S. E. Ostapov
   • V. M. Frasunyak
   • V. V. Zhikharevich

   Electrical and Optical Properties Of Semiconductors 18 August 2010 Pages: 993 - 996

6. Statistical method of deep-level transient spectroscopy in semiconductors

   • E. A. Tatokhin
   • A. V. Kadantsev
   • V. G. Zadorozhniy

   Electrical and Optical Properties of Semiconductors 18 August 2010 Pages: 997 - 1003

7. Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide

   • N. I. Anisimova
   • V. A. Bordovsky
   • R. A. Castro

   Electrical and Optical Properties of Semiconductors 18 August 2010 Pages: 1004 - 1007

8. Electron scattering by acceptor centers in p-Ag₂Te at low temperatures

   • F. F. Aliev
   • M. B. Jafarov
   • E. M. Gojaev

   Electrical and Optical Properties of Semiconductors 18 August 2010 Pages: 1008 - 1011

9. Optical properties of thin GaSe/n-Si(111) films

   • M. P. Kisselyuk
   • O. I. Vlasenko
   • Ts. A. Kryskov

   Semiconductor Structures, Interfaces, and Surfaces 18 August 2010 Pages: 1012 - 1015

10. Direct tunneling of electrons in Al-n ⁺-Si-SiO₂-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers

    • E. I. Goldman
    • Yu. V. Gulyaev
    • G. V. Chucheva

    Semiconductor Structures, Interfaces, and Surfaces 18 August 2010 Pages: 1016 - 1019

11. Capacitance-voltage characteristics of the electrolyte-n-InN surface and electron states at the interface

    • M. E. Rudinsky
    • A. A. Gutkin
    • P. N. Brunkov

    Semiconductor Structures, Interfaces, and Surfaces 18 August 2010 Pages: 1020 - 1024

12. Development and photoelectric properties of In/p-Ag₃AsS₃ surface-barrier structures

    • V. Yu. Rud’
    • Yu. V. Rud’
    • E. I. Terukov

    Semiconductor Structures, Interfaces, and Surfaces 18 August 2010 Pages: 1025 - 1029

13. Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon

    • A. M. Ivanov
    • I. M. Kotina
    • L. M. Tuhkonen

    Semiconductor Structures, Interfaces, and Surfaces 18 August 2010 Pages: 1030 - 1033

14. Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode

    • M. A. Remnev
    • I. Yu. Kateev
    • V. F. Elesin

    Low-Dimensional Systems 18 August 2010 Pages: 1034 - 1039

15. Raman studies of silicon nanocrystals embedded in silicon suboxide layers

    • N. E. Maslova
    • A. A. Antonovsky
    • V. N. Seminogov

    Low-Dimensional Systems 18 August 2010 Pages: 1040 - 1043

16. Raman scattering in organic semiconductors based on erbium biphthalocyanine molecules and chlorine-containing europium-lutetium triphthalocyanine molecules

    • I. A. Belogorokhov
    • D. A. Mamichev
    • D. R. Khokhlov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1044 - 1049

17. InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics

    • V. G. Talalaev
    • A. V. Senichev
    • G. E. Cirlin

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1050 - 1058

18. Study of spin centers in nanocrystalline titanium dioxide with a high degree of photocatalytic activity

    • E. A. Konstantinova
    • V. Ya. Gayvoronskiy
    • P. K. Kashkarov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1059 - 1063

19. Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures

    • Ya. V. Terent’ev
    • M. S. Mukhin
    • S. V. Ivanov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1064 - 1069

20. Photoluminescence of nitro-substituted europium (III) phthalocyanines

    • A. V. Ziminov
    • Yu. A. Polevaya
    • N. K. Poletaev

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1070 - 1073

21. A study of raman and rutherford backscattering spectra of amorphous carbon films modified with platinum

    • A. D. Remenyuk
    • T. K. Zvonareva
    • J. Wasyluk

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 18 August 2010 Pages: 1074 - 1079

22. Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers

    • Yu. N. Bobrenko
    • S. Yu. Pavelets
    • N. V. Yaroshenko

    Physics of Semiconductor Devices 18 August 2010 Pages: 1080 - 1083

23. Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells

    • S. A. Mintairov
    • V. M. Andreev
    • V. M. Lantratov

    Physics of Semiconductor Devices 18 August 2010 Pages: 1084 - 1089

24. Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

    • L. P. Avakyants
    • P. Yu. Bokov
    • B. S. Yavich

    Physics of Semiconductor Devices 18 August 2010 Pages: 1090 - 1095

25. InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures

    • Jung-Hui Tsai
    • Wen-Shiung Lour
    • Ying-Feng Dai

    Physics of Semiconductor Devices 18 August 2010 Pages: 1096 - 1100

26. Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding

    • I. V. Grekhov
    • L. S. Kostina
    • J. H. Je

    Fabrication, Treatment, and Testing of Materials and Structures 18 August 2010 Pages: 1101 - 1105

27. Relaxation of crystal lattice parameters and structural ordering in In _x Ga_{1 − x} As epitaxial alloys

    • P. V. Seredin
    • A. V. Glotov
    • I. S. Tarasov

    Fabrication, Treatment, and Testing of Materials and Structures 18 August 2010 Pages: 1106 - 1112

28. Properties of ZnO whiskers under CO₂-laser irradiation

    • P. S. Shkumbatyuk

    Fabrication, Treatment, and Testing of Materials and Structures 18 August 2010 Pages: 1113 - 1116