Abstract
The spectrum of deep levels formed in boron-doped Czochralski-grown silicon single crystals as a result of interaction of radiation defects with copper impurity is studied. It is shown that, irrespective of the order of introduction of defects (both in the case of low-temperature copper diffusion into crystals preliminarily irradiated with electrons and in the case of irradiation of the samples contaminated with copper), the same set of deep levels appears. In addition to conventional radiation defects, three types of levels have been detected in the band gap of copper-containing crystals. These levels include the level E v + 0.49 eV (already mentioned in available publications), the level E v + 0.51 eV (previously not related to copper), and a level close to the donor level of a vacancy. Based on the analysis of concentration profiles, the interstitial carbonoxygen pair is excluded from possible precursors of the copper-containing center with level E v + 0.49 eV.
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Original Russian Text © N.A. Yarykin, J. Weber, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 8, pp. 1017–1020.
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Yarykin, N.A., Weber, J. Interaction of copper impurity with radiation defects in silicon doped with boron. Semiconductors 44, 983–986 (2010). https://doi.org/10.1134/S1063782610080038
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DOI: https://doi.org/10.1134/S1063782610080038